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Title: Dielectric properties of disordered A 6 B 2 O 17 (A = Zr; B = Nb, Ta) phases
Abstract

We report on the structure and dielectric properties of ternary A6B2O17(A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase‐homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500°C. Crystal structure, microstructure, chemistry, and dielectric properties are characterized by X‐ray diffraction and reflectivity, atomic force microscopy, X‐ray photoelectron spectroscopy, and capacitance analysis, respectively. We observe relative permittivities approaching 60 and loss tangents <1 × 10−2across the 103–105 Hz frequency range in the Zr6Nb2O17and Zr6Ta2O17phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics.

 
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Award ID(s):
2011839
PAR ID:
10541053
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Publisher / Repository:
The American Ceramic Society
Date Published:
Journal Name:
Journal of the American Ceramic Society
Volume:
107
Issue:
10
ISSN:
0002-7820
Page Range / eLocation ID:
6868 to 6875
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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