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Title: Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation
PAR ID:
10550617
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
American Physical Society
Date Published:
Journal Name:
Physical Review Applied
Volume:
21
Issue:
6
ISSN:
2331-7019; PRAHB2
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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