Schreitmüller, T., Kumar_Saluja, D., Mead, C_E, Ramsteiner, M., Jeong, H_W, Esmaielpour, H., Huang, C., Ruhstorfer, D., Finley, J_J, Lauhon, L_J, and Koblmüller, G. Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs(Sb) nanowires. Physical Review Materials 8.7 Web. doi:10.1103/PhysRevMaterials.8.076002.

Schreitmüller, T., Kumar_Saluja, D., Mead, C_E, Ramsteiner, M., Jeong, H_W, Esmaielpour, H., Huang, C., Ruhstorfer, D., Finley, J_J, Lauhon, L_J, & Koblmüller, G. Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs(Sb) nanowires. Physical Review Materials, 8 (7). https://doi.org/10.1103/PhysRevMaterials.8.076002

Schreitmüller, T., Kumar_Saluja, D., Mead, C_E, Ramsteiner, M., Jeong, H_W, Esmaielpour, H., Huang, C., Ruhstorfer, D., Finley, J_J, Lauhon, L_J, and Koblmüller, G. "Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs(Sb) nanowires". Physical Review Materials 8 (7). Country unknown/Code not available: American Physical Society. https://doi.org/10.1103/PhysRevMaterials.8.076002. https://par.nsf.gov/biblio/10550998.

@article{osti_10550998,
place = {Country unknown/Code not available}, title = {Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs(Sb) nanowires}, url = {https://par.nsf.gov/biblio/10550998}, DOI = {10.1103/PhysRevMaterials.8.076002}, abstractNote = {Not Available}, journal = {Physical Review Materials}, volume = {8}, number = {7}, publisher = {American Physical Society}, author = {Schreitmüller, T. and Kumar_Saluja, D. and Mead, C_E and Ramsteiner, M. and Jeong, H_W and Esmaielpour, H. and Huang, C. and Ruhstorfer, D. and Finley, J_J and Lauhon, L_J and Koblmüller, G.}, }