Abstract Controlling both the spectral bandwidth and directionality of emitted thermal radiation is a fundamental challenge in contemporary photonics. Recent work has shown that materials with a spatial gradient in the frequency range of their epsilon‐near‐zero (ENZ) response can support broad spectrum directionality in their emissivity, enabling high total radiance to specific angles of incidence. However, this capability is limited spectrally and directionally by the availability of materials with phonon‐polariton resonances over long‐wave infrared wavelengths. Here, an approach is designed and experimentally demonstrated using doped III–V semiconductors that can simultaneously tailor spectral peak, bandwidth, and directionality of infrared emissivity. InAs‐based gradient ENZ photonic structures that exhibit broadband directional emission with varying spectral bandwidths and directional ranges as a function of their doping concentration profile and thickness are epitaxially grown and characterized. Due to its easy‐to‐fabricate geometry, it is believed that this approach provides a versatile photonic platform to dynamically control broadband spectral and directional emissivity for a range of emerging applications in heat transfer and infrared sensing.
more »
« less
Vertical Thermal Emission from Optical Antennas on an Epsilon‐Near–Zero Substrate
Abstract This work presents a novel approach to achieve directional and normal thermal emission from epsilon‐near–zero (ENZ) materials. ENZ materials exhibit near–zero permittivity at the ENZ point, resulting in some unique properties compared to conventional optical materials including infinite wavelength, constant phase distribution, and decoupling of spatial and temporal fields inside the ENZ material. These properties are used to engineer the far‐field thermal emission from optical antennas fabricated on ENZ film in the mid‐infrared. By coupling the antenna resonance mode with the Berreman mode of the ENZ material, highly directional and normal emission is demonstrated. This approach could have significant implications for thermal management, energy conversion, and sensing applications.
more »
« less
- Award ID(s):
- 2118787
- PAR ID:
- 10552017
- Publisher / Repository:
- Wiley
- Date Published:
- Journal Name:
- Advanced Optical Materials
- Volume:
- 12
- Issue:
- 25
- ISSN:
- 2195-1071
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Enhanced and controlled light absorption as well as field confinement in an optically thin material are pivotal for energy-efficient optoelectronics and nonlinear optical devices. Highly doped transparent conducting oxide (TCO) thin films with near-zero permittivity can support ENZ modes in the so-called epsilon near zero (ENZ) frequency region, which can lead to perfect light absorption and ultra-strong electric field intensity enhancement (FIE) within the films. To achieve full control over absorption and FIE, one must be able to tune the ENZ material properties as well as the film thickness. Here, we experimentally demonstrate engineered absorption and FIE in aluminum doped zinc oxide (AZO) thin films via control of their ENZ wavelengths, optical losses, and film thicknesses, tuned by adjusting the atomic layer deposition (ALD) parameters such as dopant ratio, deposition temperature, and number of macro-cycles. We also demonstrate that under ENZ mode excitation, though the absorption and FIE are inherently related, the film thickness required for observing maximum absorption differs significantly from that for maximum FIE. This study on engineering ENZ material properties by optimizing the ALD process will be beneficial for the design and development of next- generation tunable photonic devices based on flat, zero-index optics.more » « less
-
The reciprocity between thermal emission and absorption in materials that satisfy the Lorentz reciprocity places a fundamental constraint on photonic energy conversion and thermal management. For approaching the ultimate thermodynamic limits in various photonic energy conversions and achieving nonreciprocal radiative thermal management, broadband nonreciprocal thermal emission is desired. However, existing designs of nonreciprocal emitters are narrowband. Here, we introduce a gradient epsilon-near-zero magneto-optical metamaterial for achieving broadband nonreciprocal thermal emission. We start by analyzing the nonreciprocal thermal emission and absorption in a thin layer of epsilon-near-zero magneto-optical material atop a substrate. We use temporal coupled-mode theory to elucidate the mechanism of nonreciprocal emission in the thin-film emitter. We then introduce a general approach for achieving broadband nonreciprocal emission by using a gradient epsilon-near-zero magnetooptical metamaterial. We numerically demonstrate broadband nonreciprocal emission in gradient-doped semiconductor multilayer, as well as in a magnetic Weyl semimetal multilayer with gradient chemical potential. Our approach for achieving broadband nonreciprocal emitters is useful for developing broadband nonreciprocal devices for energy conversion and thermal management.more » « less
-
Abstract Due to its transparent and conductive nature, indium tin oxide (ITO) offers substantial benefits in several industries, such as thin film transistors, displays, and nanophotonics. Previous studies on ultrathin ITO have so far focused on its electrical properties but have neglected the technologically important epsilon-near-zero (ENZ) optical features due to the difficulty of extracting the refractive index and the thickness-dependent degradation of the optical properties. Here, we demonstrate a complementary metal-oxide-semiconductor (CMOS)-compatible deposition procedure for sub-percolation thickness (below 4 nm) ITO using a dry-etch assisted radiofrequency magnetron sputtering technique that yields continuous films in a precisely controlled manner. Through interface engineering and post-deposition annealing optimization, we show that these ITO films can retain high carrier mobility (43 cm2V−1s−1) while achieving a tunable near-zero-index (NZI) regime throughout the telecommunications band using a Berreman-assisted optical characterization technique. Our result opens the possibility of efficiently designing ENZ/NZI materials at the nanoscale using a robust fabrication approach for applications in nanophotonics.more » « less
-
Abstract The epsilon‐near‐zero (ENZ) frequency regime of transparent conducting oxide materials is known to yield large enhancements in their optical nonlinearity and electro‐optic response. Here, Faraday rotation is investigated in Gd and In‐doped CdO films and it is found that the Verdet constant peaks at values >3 105 deg T−1 m−1near the ENZ frequency, which is tunable in the wavelength range 2 < λ< 10 µm by varying the doping concentration. These results are among the highest reported to date in the mid‐infrared spectral range and are in good agreement with the Drude model, which confirms that the magneto‐optic response of doped CdO derives from its free carriers. The combination of a tunable Verdet constant, low optical loss compared to other plasmonic materials, and the ability to deposit CdO on Si with no loss in performance make this material a promising platform for integrated magneto‐optic and magnetoplasmonic devices that operate across the mid‐infrared.more » « less
An official website of the United States government

