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  • A 200-GHz Power Amplifier With 18.7-dBm P sat in 45-nm CMOS SOI: A Model-Based Large-Signal Approach on Cascaded Series-Connected Power Amplification
Title: A 200-GHz Power Amplifier With 18.7-dBm P sat in 45-nm CMOS SOI: A Model-Based Large-Signal Approach on Cascaded Series-Connected Power Amplification
Award ID(s):
1932821
PAR ID:
10552262
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
IEEE
Date Published:
Journal Name:
IEEE Journal of Solid-State Circuits
Volume:
59
Issue:
6
ISSN:
0018-9200
Page Range / eLocation ID:
1631 to 1642
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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