Makala, Manikanta, Barłóg, Maciej, Dremann, Derek, Attar, Salahuddin, Fernández, Edgar Gutiérrez, Al-Hashimi, Mohammed, and Jurchescu, Oana D. High-performance n-type polymer field-effect transistors with exceptional stability. Retrieved from https://par.nsf.gov/biblio/10552393. Journal of Materials Chemistry C . Web. doi:10.1039/d4tc03294b.

Makala, Manikanta, Barłóg, Maciej, Dremann, Derek, Attar, Salahuddin, Fernández, Edgar Gutiérrez, Al-Hashimi, Mohammed, & Jurchescu, Oana D. High-performance n-type polymer field-effect transistors with exceptional stability. Journal of Materials Chemistry C, (). Retrieved from https://par.nsf.gov/biblio/10552393. https://doi.org/10.1039/d4tc03294b

Makala, Manikanta, Barłóg, Maciej, Dremann, Derek, Attar, Salahuddin, Fernández, Edgar Gutiérrez, Al-Hashimi, Mohammed, and Jurchescu, Oana D. "High-performance n-type polymer field-effect transistors with exceptional stability". Journal of Materials Chemistry C (). Country unknown/Code not available: RSC. https://doi.org/10.1039/d4tc03294b. https://par.nsf.gov/biblio/10552393.

@article{osti_10552393,
place = {Country unknown/Code not available}, title = {High-performance n-type polymer field-effect transistors with exceptional stability}, url = {https://par.nsf.gov/biblio/10552393}, DOI = {10.1039/d4tc03294b}, abstractNote = {}, journal = {Journal of Materials Chemistry C}, publisher = {RSC}, author = {Makala, Manikanta and Barłóg, Maciej and Dremann, Derek and Attar, Salahuddin and Fernández, Edgar Gutiérrez and Al-Hashimi, Mohammed and Jurchescu, Oana D}, }