Huang, Tianyi, Lin, Sen, Zou, Jingyi, Wang, Zexiao, Zhong, Yibai, Li, Jingwei, Wang, Ruixuan, Wang, Zhixing, St_Luce, Kevin, Kim, Rex, Cui, Jianzhou, Wang, Han, Li, Qing, Xu, Min, Shen, Sheng, and Zhang, Xu. Physical Vapor Deposition of High-Mobility P-Type Tellurium and Its Applications for Gate-Tunable van der Waals PN Photodiodes. ACS Applied Materials & Interfaces 17.1 Web. doi:10.1021/acsami.4c14865.

Huang, Tianyi, Lin, Sen, Zou, Jingyi, Wang, Zexiao, Zhong, Yibai, Li, Jingwei, Wang, Ruixuan, Wang, Zhixing, St_Luce, Kevin, Kim, Rex, Cui, Jianzhou, Wang, Han, Li, Qing, Xu, Min, Shen, Sheng, & Zhang, Xu. Physical Vapor Deposition of High-Mobility P-Type Tellurium and Its Applications for Gate-Tunable van der Waals PN Photodiodes. ACS Applied Materials & Interfaces, 17 (1). https://doi.org/10.1021/acsami.4c14865

Huang, Tianyi, Lin, Sen, Zou, Jingyi, Wang, Zexiao, Zhong, Yibai, Li, Jingwei, Wang, Ruixuan, Wang, Zhixing, St_Luce, Kevin, Kim, Rex, Cui, Jianzhou, Wang, Han, Li, Qing, Xu, Min, Shen, Sheng, and Zhang, Xu. "Physical Vapor Deposition of High-Mobility P-Type Tellurium and Its Applications for Gate-Tunable van der Waals PN Photodiodes". ACS Applied Materials & Interfaces 17 (1). Country unknown/Code not available: American Chemical Society. https://doi.org/10.1021/acsami.4c14865. https://par.nsf.gov/biblio/10561385.

@article{osti_10561385,
place = {Country unknown/Code not available}, title = {Physical Vapor Deposition of High-Mobility P-Type Tellurium and Its Applications for Gate-Tunable van der Waals PN Photodiodes}, url = {https://par.nsf.gov/biblio/10561385}, DOI = {10.1021/acsami.4c14865}, abstractNote = {Not Available}, journal = {ACS Applied Materials & Interfaces}, volume = {17}, number = {1}, publisher = {American Chemical Society}, author = {Huang, Tianyi and Lin, Sen and Zou, Jingyi and Wang, Zexiao and Zhong, Yibai and Li, Jingwei and Wang, Ruixuan and Wang, Zhixing and St_Luce, Kevin and Kim, Rex and Cui, Jianzhou and Wang, Han and Li, Qing and Xu, Min and Shen, Sheng and Zhang, Xu}, }