Zhang, Dong, Feng, Yang, Zheng, Zijie, Sun, Chen, Kong, Qiwen, Liu, Gan, Zhou, Zuopu, Liang, Gengchiau, Ni, Kai, Wu, Jixuan, Chen, Jiezhi, and Gong, Xiao. Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism. Retrieved from https://par.nsf.gov/biblio/10565306. Web. doi:10.1109/VLSITechnologyandCir46783.2024.10631318.

Zhang, Dong, Feng, Yang, Zheng, Zijie, Sun, Chen, Kong, Qiwen, Liu, Gan, Zhou, Zuopu, Liang, Gengchiau, Ni, Kai, Wu, Jixuan, Chen, Jiezhi, & Gong, Xiao. Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism. Retrieved from https://par.nsf.gov/biblio/10565306. https://doi.org/10.1109/VLSITechnologyandCir46783.2024.10631318

Zhang, Dong, Feng, Yang, Zheng, Zijie, Sun, Chen, Kong, Qiwen, Liu, Gan, Zhou, Zuopu, Liang, Gengchiau, Ni, Kai, Wu, Jixuan, Chen, Jiezhi, and Gong, Xiao. "Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism". Country unknown/Code not available: IEEE. https://doi.org/10.1109/VLSITechnologyandCir46783.2024.10631318. https://par.nsf.gov/biblio/10565306.

@article{osti_10565306,
place = {Country unknown/Code not available}, title = {Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism}, url = {https://par.nsf.gov/biblio/10565306}, DOI = {10.1109/VLSITechnologyandCir46783.2024.10631318}, abstractNote = {}, journal = {}, publisher = {IEEE}, author = {Zhang, Dong and Feng, Yang and Zheng, Zijie and Sun, Chen and Kong, Qiwen and Liu, Gan and Zhou, Zuopu and Liang, Gengchiau and Ni, Kai and Wu, Jixuan and Chen, Jiezhi and Gong, Xiao}, }