Das, Mayukh, Sen, Dipanjan, Sakib, Najam U, Ravichandran, Harikrishnan, Sun, Yongwen, Zhang, Zhiyu, Ghosh, Subir, Venkatram, Pranavram, Subbulakshmi_Radhakrishnan, Shiva, Sredenschek, Alexander, Yu, Zhuohang, Sarkar, Kalyan Jyoti, Sadaf, Muhtasim_Ul Karim, Meganathan, Kalaiarasan, Pannone, Andrew, Han, Ying, Sanchez, David Emanuel, Somvanshi, Divya, Sofer, Zdenek, Terrones, Mauricio, Yang, Yang, and Das, Saptarshi. High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials. Retrieved from https://par.nsf.gov/biblio/10569200. Nature Electronics 8.1 Web. doi:10.1038/s41928-024-01265-2.

Das, Mayukh, Sen, Dipanjan, Sakib, Najam U, Ravichandran, Harikrishnan, Sun, Yongwen, Zhang, Zhiyu, Ghosh, Subir, Venkatram, Pranavram, Subbulakshmi_Radhakrishnan, Shiva, Sredenschek, Alexander, Yu, Zhuohang, Sarkar, Kalyan Jyoti, Sadaf, Muhtasim_Ul Karim, Meganathan, Kalaiarasan, Pannone, Andrew, Han, Ying, Sanchez, David Emanuel, Somvanshi, Divya, Sofer, Zdenek, Terrones, Mauricio, Yang, Yang, & Das, Saptarshi. High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials. Nature Electronics, 8 (1). Retrieved from https://par.nsf.gov/biblio/10569200. https://doi.org/10.1038/s41928-024-01265-2

Das, Mayukh, Sen, Dipanjan, Sakib, Najam U, Ravichandran, Harikrishnan, Sun, Yongwen, Zhang, Zhiyu, Ghosh, Subir, Venkatram, Pranavram, Subbulakshmi_Radhakrishnan, Shiva, Sredenschek, Alexander, Yu, Zhuohang, Sarkar, Kalyan Jyoti, Sadaf, Muhtasim_Ul Karim, Meganathan, Kalaiarasan, Pannone, Andrew, Han, Ying, Sanchez, David Emanuel, Somvanshi, Divya, Sofer, Zdenek, Terrones, Mauricio, Yang, Yang, and Das, Saptarshi. "High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials". Nature Electronics 8 (1). Country unknown/Code not available: Nature Electronics. https://doi.org/10.1038/s41928-024-01265-2. https://par.nsf.gov/biblio/10569200.

@article{osti_10569200,
place = {Country unknown/Code not available}, title = {High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials}, url = {https://par.nsf.gov/biblio/10569200}, DOI = {10.1038/s41928-024-01265-2}, abstractNote = {}, journal = {Nature Electronics}, volume = {8}, number = {1}, publisher = {Nature Electronics}, author = {Das, Mayukh and Sen, Dipanjan and Sakib, Najam U and Ravichandran, Harikrishnan and Sun, Yongwen and Zhang, Zhiyu and Ghosh, Subir and Venkatram, Pranavram and Subbulakshmi_Radhakrishnan, Shiva and Sredenschek, Alexander and Yu, Zhuohang and Sarkar, Kalyan Jyoti and Sadaf, Muhtasim_Ul Karim and Meganathan, Kalaiarasan and Pannone, Andrew and Han, Ying and Sanchez, David Emanuel and Somvanshi, Divya and Sofer, Zdenek and Terrones, Mauricio and Yang, Yang and Das, Saptarshi}, }