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1. Ca ₂ Ga ₄ Ge ₆ and Ca ₃ Ga ₄ Ge ₆ : Synthesis, Structure, and Electronic Properties

   https://doi.org/10.1002/zaac.202100342  

   Hodge, Kelsey L; Davis, H Olivia; Koster, Karl G; Windl, Wolfgang; Moore, Curtis E; Goldberger, Joshua E (August 2022, Zeitschrift für anorganische und allgemeine Chemie)

   Abstract During the search for transition metal‐free alkyne hydrogenation catalysts, two new ternary Ca−Ga−Ge phases, Ca₂Ga₄Ge₆(Cmc2₁, a=4.1600(10) Å, b=23.283(5) Å, c=10.789(3) Å) and Ca₃Ga₄Ge₆(C2/m, a=24.063(2) Å, b=4.1987(4) Å, c=10.9794(9) Å, β=91.409(4)°), were discovered. These compounds are isostructural to the previously established Yb₂Ga₄Ge₆and Yb₃Ga₄Ge₆analogues, and according to Zintl‐Klemm counting rules, consist of anionic [Ga₄Ge₆]⁴⁻and [Ga₄Ge₆]⁶⁻frameworks in which every Ga and Ge atom would have a formal octet with no Ga−Ga or Ga−Ge π‐bonding. These compounds are metallic, based on temperature dependent electrical resistivity and thermopower measurements for Ca₃Ga₄Ge₆, along with density functional theory calculations for both phases. Unlike the highly active 13‐layer trigonal CaGaGe phase, these new compounds exhibit minimal activity in the semi/full alkyne hydrogenation of phenylacetylene, which is consistent with previous observations that the lack of a formal octet for framework atoms is essential for catalysis in these Zintl‐Klemm compounds. 

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2. σ‐Aromaticity‐Induced Stabilization of Heterometallic Supertetrahedral Clusters [Zn ₆ Ge ₁₆ ] ⁴⁻ and [Cd ₆ Ge ₁₆ ] ⁴⁻

   https://doi.org/10.1002/anie.202008276  

   Xu, Hong‐Lei; Popov, Ivan A.; Tkachenko, Nikolay V.; Wang, Zi‐Chuan; Muñoz‐Castro, Alvaro; Boldyrev, Alexander I.; Sun, Zhong‐Ming (September 2020, Angewandte Chemie International Edition)

   null (Ed.)
3. Spin filtering effect in intrinsic 2D magnetic semiconductor Cr ₂ Ge ₂ Te ₆

   https://doi.org/10.1063/5.0102745  

   Feng, Honglei; Shi, Gang; Yan, Dayu; Li, Yong; Shi, Youguo; Xu, Yang; Xiong, Peng; Li, Yongqing (October 2022, Applied Physics Letters)

   All van der Waals Fe 3 GeTe 2 /Cr 2 Ge 2 Te 6 /graphite magnetic heterojunctions have been fabricated via mechanical exfoliation and stacking, and their magnetotransport properties are studied in detail. At low bias voltages, large negative junction magnetoresistances have been observed and are attributed to spin-conserving tunneling transport across an insulating Cr 2 Ge 2 Te 6 layer. With increasing bias, a crossover to Fowler–Nordheim tunneling takes place. The negative sign of the tunneling magnetoresistance suggests that the bottom of a conduction band in Cr 2 Ge 2 Te 6 belongs to minority spins, opposite to the findings of some first-principles calculations. This work shows that the vdW heterostructures based on 2D magnetic insulators are a valuable platform to gain further insight into spin polarized tunneling transport, which is the basis for pursuing high performance spintronic devices and a large variety of quantum phenomena. 

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4. Crystal Growth and Physical Properties of Hybrid CoSn–YCo ₆ Ge ₆ Structure Type Ln _x Co ₃ (Ge _1–y Sn _y ) ₃ (Ln = Y, Gd)

   https://doi.org/10.1021/acs.inorgchem.3c02172  

   Bravo, Moisés; McCandless, Gregory T.; Baumbach, Ryan E.; Wang, Yaojia; Ali, Mazhar N.; Chan, Julia Y. (November 2023, Inorganic Chemistry)
5. Law and Disorder: Special Stacking Units—Building the Intergrowth Ce ₆ Co ₅ Ge ₁₆

   https://doi.org/10.1021/acs.inorgchem.9b00350  

   Felder, Justin B.; Weiland, Ashley; Hodovanets, Halyna; McCandless, Gregory T.; Estrada, Tania G.; Martin, Thomas J.; Walker, Amy V.; Paglione, Johnpierre; Chan, Julia Y. (April 2019, Inorganic Chemistry)