skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Space Qualifying Silicon Photonic Modulators and Circuits
Here we performed the first space experiments of photonic integrated circuits, revealing the critical roles of energetic charged particles. The year-long cosmic radiation does not change carrier mobility but reduces free carrier lifetime, resulting in unchanged electro-optic modulation efficiency and well-expanded optoelectronic bandwidth.  more » « less
Award ID(s):
2338546
PAR ID:
10576047
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
Optica Publishing Group
Date Published:
ISBN:
978-1-957171-32-6
Page Range / eLocation ID:
Th3D.4
Format(s):
Medium: X
Location:
San Diego California
Sponsoring Org:
National Science Foundation
More Like this
  1. Large-scale carrier networks are fundamental ICT infrastructures that support future 5G/6G services, and their resilience is a primary societal concern. Differently from single-carrier networks (in which one carrier owns multiple networks), in multi-carrier network ecosystems (in which the networks in the fields are operated by different carriers), cooperation among such different carriers is crucial to achieve resilience against large-scale failures. However, such cooperation is challenging since carriers may not disclose confidential information, e.g., detailed resource availability. In this study, we investigate how to perform carrier cooperative recovery in the case of large-scale failures/disasters. We propose two-stage carrier-carrier cooperative recovery planning by incorporating a coordinated scheduling for faster recovery. Through numerical evaluation, we confirm the potential benefit of carrier cooperation in terms of both recovery time and recovery cost reduction. 
    more » « less
  2. Understanding and determination of the ambipolar diffusivity of a semiconductor is fundamental for predicting device behavior and optimizing its performance. Ultrafast pump-probe measurements allow for the determination of energy carrier dynamics with sub-picosecond resolution. Due to the inherent diffusive nature of carriers, measurements with a high spatial resolution are needed, in addition to the traditional pump-probe system, to determine not only the carrier dynamics but also the spatial extent caused by carrier diffusion as well. In this work, a spatiotemporal measurement system with ultrafast temporal and nanometric spatial resolution, together with a comprehensive transport model, is used to determine the ambipolar diffusivity and carrier-phonon energy coupling time in both undoped and doped silicon. The results show that as the carrier density increases, the measured ambipolar diffusivity decreases with minimal variation in the carrier-phonon energy coupling time. In general, this work demonstrates an optical-based method for determining ambipolar diffusivity in a semiconductor material. 
    more » « less
  3. Abstract Carrier concentration optimization has been an enduring challenge when developing newly discovered semiconductors for applications (e.g., thermoelectrics, transparent conductors, photovoltaics). This barrier has been particularly pernicious in the realm of high-throughput property prediction, where the carrier concentration is often assumed to be a free parameter and the limits are not predicted due to the high computational cost. In this work, we explore the application of machine learning for high-throughput carrier concentration range prediction. Bounding the model within diamond-like semiconductors, the learning set was developed from experimental carrier concentration data on 127 compounds ranging from unary to quaternary. The data were analyzed using various statistical and machine learning methods. Accurate predictions of carrier concentration ranges in diamond-like semiconductors are made within approximately one order of magnitude on average across bothp- andn-type dopability. The model fit to empirical data is analyzed to understand what drives trends in carrier concentration and compared with previous computational efforts. Finally, dopability predictions from this model are combined with high-throughput quality factor predictions to identify promising thermoelectric materials. 
    more » « less
  4. We reported significant improvements in device speed by reducing the quantum barrier (QB) thicknesses in the InGaN/GaN multiple quantum well (MQW) photodetectors (PDs). A 3-dB bandwidth of 700 MHz was achieved with a reverse bias of -6 V. Carrier escape lifetimes due to carrier trapping in the quantum wells (QWs) were obtained from both simulation and experimental fitting, identifying carrier trapping as the major speed limiting factor in the InGaN/GaN MQW PDs. 
    more » « less
  5. Abstract Above‐equilibrium “hot”‐carrier generation in metals is a promising route to convert photons into electrical charge for efficient near‐infrared optoelectronics. However, metals that offer both hot‐carrier generation in the near‐infrared and sufficient carrier lifetimes remain elusive. Alloys can offer emergent properties and new design strategies compared to pure metals. Here, it is shown that a noble‐transition alloy, AuxPd1−x, outperforms its constituent metals concerning generation and lifetime of hot carriers when excited in the near‐infrared. At optical fiber wavelengths (e.g., 1550 nm), Au50Pd50provides a 20‐fold increase in the number of ≈0.8 eV hot holes, compared to Au, and a threefold increase in the carrier lifetime, compared to Pd. The discovery that noble‐transition alloys can excel at hot‐carrier generation reveals a new material platform for near‐infrared optoelectronic devices. 
    more » « less