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It has recently been demonstrated that electron beam injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length with injection duration, followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) at meta-stable native defect levels in the material, which in turn blocks recombination through these levels. In this work, in contrast to previous studies, the effect of electron injection in p-type Ga2O3 was investigated using cathodoluminescence technique in situ in scanning electron microscope, thus providing insight into minority carrier lifetime behavior under electron beam irradiation. The activation energy of ∼0.3 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.
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EBIC studies of minority electron diffusion length in undoped p-type gallium oxide
Minority carrier diffusion length in undoped p-type gallium oxide was measured at various temperatures as a function of electron beam charge injection by electron beam-induced current technique in situ using a scanning electron microscope. The results demonstrate that charge injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) on metastable native defect levels in the material, which in turn blocks recombination through these levels. While previous studies of the same material were focused on probing a non-equilibrium carrier recombination by purely optical means (cathodoluminescence), in this work, the impact of charge injection on minority carrier diffusion was investigated. The activation energy of ∼0.072 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.
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- PAR ID:
- 10580327
- Publisher / Repository:
- AIP Publishing
- Date Published:
- Journal Name:
- AIP Advances
- Volume:
- 14
- Issue:
- 11
- ISSN:
- 2158-3226
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Journal Article:
- https://doi.org/10.1063/5.0238027
