Alam, Mohammed_Sadman, Motin, Md_Abdul, and Zaera, Francisco. Gas- versus Liquid-Phase Silylation as a Way to Inhibit Thin-Film Atomic Layer Deposition (ALD) on Silicon Oxide Substrates. The Journal of Physical Chemistry C 129.20 Web. doi:10.1021/acs.jpcc.5c02266.

Alam, Mohammed_Sadman, Motin, Md_Abdul, & Zaera, Francisco. Gas- versus Liquid-Phase Silylation as a Way to Inhibit Thin-Film Atomic Layer Deposition (ALD) on Silicon Oxide Substrates. The Journal of Physical Chemistry C, 129 (20). https://doi.org/10.1021/acs.jpcc.5c02266

Alam, Mohammed_Sadman, Motin, Md_Abdul, and Zaera, Francisco. "Gas- versus Liquid-Phase Silylation as a Way to Inhibit Thin-Film Atomic Layer Deposition (ALD) on Silicon Oxide Substrates". The Journal of Physical Chemistry C 129 (20). Country unknown/Code not available: American Chemical Society. https://doi.org/10.1021/acs.jpcc.5c02266. https://par.nsf.gov/biblio/10588469.

@article{osti_10588469,
place = {Country unknown/Code not available}, title = {Gas- versus Liquid-Phase Silylation as a Way to Inhibit Thin-Film Atomic Layer Deposition (ALD) on Silicon Oxide Substrates}, url = {https://par.nsf.gov/biblio/10588469}, DOI = {10.1021/acs.jpcc.5c02266}, abstractNote = {Not Available}, journal = {The Journal of Physical Chemistry C}, volume = {129}, number = {20}, publisher = {American Chemical Society}, author = {Alam, Mohammed_Sadman and Motin, Md_Abdul and Zaera, Francisco}, }