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Polycrystalline IrGe4 was synthesized by annealing elements at 800 °C for 240 h, and the composition was confirmed by energy-dispersive X-ray spectroscopy. IrGe4 adopts a chiral crystal structure (space group P3121) instead of a polar crystal structure (P31), which was corroborated by the convergent-beam electron diffraction and Rietveld refinements using synchrotron powder X-ray diffraction data. The crystal structure features layers of IrGe8 polyhedra along the b axis, and the layers are connected by edge- and corner-sharing. Each layer consists of corner-shared [Ir3Ge20] trimers, which are formed by three IrGe8 polyhedra connected by edge-sharing. Temperature-dependent resistivity indicates metallic behavior. The magnetoresistance increases with increasing applied magnetic field, and the nonsaturating magnetoresistance reaches 11.5% at 9 T and 10 K. The Hall resistivity suggests that holes are the majority carrier type, with a carrier concentration of 4.02 × 1021 cm–3 at 300 K. Electronic band structures calculated by density functional theory reveal a Weyl point with a chiral charge of +3 above the Fermi level.
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Advancing the Ca 14 AlSb 11 Structure Type: Synthesis and Characterization of Yb 14 CdSb 11 for Thermoelectric Applications
The ternary phase, Yb14CdSb11, has been synthesized by flux and polycrystalline methods. The crystal structure is determined via single-crystal X-ray diffraction, revealing that it crystallizes in the Ca14AlSb11 structure type (I41/acd space group with unit cell parameters of a = 16.5962(2) & Aring; and c = 22.1346(5) & Aring;, 90 K, Z = 8, R1 = 2.65%, and wR2 = 4.58%). The polycrystalline form of the compound is synthesized from a stoichiometric reaction of Yb4Sb3, CdSb, Yb, and Sb. The elemental composition is confirmed using scanning electron microscopy and energy-dispersive spectroscopy, and phase purity is verified by powder X-ray diffraction. Thermoelectric measurements, including resistivity, Seebeck coefficient, thermal conductivity, Hall carrier concentration, and Hall mobility, are conducted from 300 to 1273 K. Yb14CdSb11 exhibits a peak zT = 0.90 at 1200 K. Carrier concentration and Hall mobility range from 6.99 x 1020-1.01 x 1021 cm-3 and 4.45-9.35 x 10-1 cm2 V-1 s-1, respectively. This carrier concentration is lower than that reported for the Zn or Mn analogs leading to a lower thermoelectric figure of merit at high temperatures. However, with appropriate doping, this phase should also be a promising p-type candidate for high-temperature energy conversion applications.
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- Award ID(s):
- 2307231
- PAR ID:
- 10590012
- Publisher / Repository:
- Wiley
- Date Published:
- Journal Name:
- Zeitschrift für anorganische und allgemeine Chemie
- ISSN:
- 0044-2313
- Subject(s) / Keyword(s):
- Zintl phase Ca14AlSb11 structure type Thermoelectric performance crystal structure
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1002/zaac.202500015
