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Abstract The mechanical exfoliation of naturally occurring layered materials has emerged as an easy and effective method for achieving ultrathin van der Waals (vdW) heterostructures with well-defined lattice orientations of the constituent two-dimensional (2D) material layers. Cylindrite is one such naturally occurring vdW heterostructure, where the superlattice is composed of alternating stacks of SnS2-like and PbS-like layers. Although the constituent 2D lattices are isotropic, inhomogeneous strain occurring from local atomic alignment for forcing the commensuration makes the cylindrite superlattice structurally anisotropic. Here, we demonstrate the highly anisotropic optical responses of cylindrite thin flakes induced by the anisotropic crystal structure, including angle-resolved polarized Raman scattering, linear dichroism, and polarization-dependent anisotropic third-harmonic generation. Our results provide a promising approach for identifying various natural vdW heterostructure-based 2D materials with tailored optical properties and can be harnessed for realizing anisotropic optical devices for on-chip photonic circuits and optical information processing.
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Continuously tunable uniaxial strain control of van der Waals heterostructure devices
Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to −0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques.
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- Award ID(s):
- 2308979
- PAR ID:
- 10593736
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 135
- Issue:
- 20
- ISSN:
- 0021-8979
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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