Waters, Dacen, Waleffe, Derek, Thompson, Ellis, Arreguin-Martinez, Esmeralda, Fonseca, Jordan, Poirier, Thomas, Edgar, James H, Watanabe, Kenji, Taniguchi, Takashi, Xu, Xiaodong, Cobden, David, and Yankowitz, Matthew. Anomalous Hysteresis in Graphite/Boron Nitride Transistors. Retrieved from https://par.nsf.gov/biblio/10600442. Nano Letters 25.21 Web. doi:10.1021/acs.nanolett.5c01799.

Waters, Dacen, Waleffe, Derek, Thompson, Ellis, Arreguin-Martinez, Esmeralda, Fonseca, Jordan, Poirier, Thomas, Edgar, James H, Watanabe, Kenji, Taniguchi, Takashi, Xu, Xiaodong, Cobden, David, & Yankowitz, Matthew. Anomalous Hysteresis in Graphite/Boron Nitride Transistors. Nano Letters, 25 (21). Retrieved from https://par.nsf.gov/biblio/10600442. https://doi.org/10.1021/acs.nanolett.5c01799

Waters, Dacen, Waleffe, Derek, Thompson, Ellis, Arreguin-Martinez, Esmeralda, Fonseca, Jordan, Poirier, Thomas, Edgar, James H, Watanabe, Kenji, Taniguchi, Takashi, Xu, Xiaodong, Cobden, David, and Yankowitz, Matthew. "Anomalous Hysteresis in Graphite/Boron Nitride Transistors". Nano Letters 25 (21). Country unknown/Code not available: ACS. https://doi.org/10.1021/acs.nanolett.5c01799. https://par.nsf.gov/biblio/10600442.

@article{osti_10600442,
place = {Country unknown/Code not available}, title = {Anomalous Hysteresis in Graphite/Boron Nitride Transistors}, url = {https://par.nsf.gov/biblio/10600442}, DOI = {10.1021/acs.nanolett.5c01799}, abstractNote = {}, journal = {Nano Letters}, volume = {25}, number = {21}, publisher = {ACS}, author = {Waters, Dacen and Waleffe, Derek and Thompson, Ellis and Arreguin-Martinez, Esmeralda and Fonseca, Jordan and Poirier, Thomas and Edgar, James H and Watanabe, Kenji and Taniguchi, Takashi and Xu, Xiaodong and Cobden, David and Yankowitz, Matthew}, }