Conductive homoepitaxial Si-doped β-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3, mobility = 64.5 cm2 V−1 s−1, and electrical activation efficiency = 77%). High quality homoepitaxial films deposited on commercial (010) Fe-compensated β-Ga2O substrates were determined by high-resolution transmission electron microscopy and x-ray diffraction. The β-Ga2O3 films have ∼70% transparency from 3.7 eV (335 nm) to 0.56 eV (2214 nm). The combination of high conductivity and transparency offers promise for numerous ultrawide bandgap electronics and optoelectronic applications.
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This content will become publicly available on February 4, 2026
$B\to D^{(*)}$ decays from $N_f=2+1+1$ highly improved staggered quarks and clover $b$-quark in the Fermilab interpretation.
- Award ID(s):
- 2310571
- PAR ID:
- 10601184
- Publisher / Repository:
- Sissa Medialab
- Date Published:
- Page Range / eLocation ID:
- 255
- Format(s):
- Medium: X
- Location:
- Liverpool, UK
- Sponsoring Org:
- National Science Foundation
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