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This paper presents an antenna-coupled non-linear vanadium dioxide (VO2) microbolometer operating in the non-linear metal–insulator transition (MIT) region with an ultra-high responsivity of 6.55 × 104 V/W. Sputtered VO2 films used in this device exhibit 104 times change in resistivity between the dielectric and conductive states. The VO2 microbolometer is coupled to a wideband dipole antenna operating at 31–55 GHz and a coplanar waveguide for probed measurement. To enhance the sensitivity, the sensor is suspended in air by micro-electro-mechanical systems process. The large thermal coefficient of resistance of VO2 is utilized by DC biasing the device in the MIT region. Measurements for the fabricated sensor were performed, and a high responsivity was demonstrated, owing to non-linear conductivity change in the transition region. The measured sensitivity is >102 times higher than the state-of-the-art sensors. In addition, the concept of utilizing the proposed VO2 sensor in a mmWave imager was demonstrated by the radiation pattern measurement of a 4 × 4 (16 elements) antenna-coupled VO2 sensor array. The results presented in this work reveal the initial step to employ VO2's MIT for a hyper-sensitive sensor in future mmWave sensing and imaging applications.
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High-frequency electrical behavior in V3O5 thin films
Vanadium oxides are known for their metal–insulator transition (MIT), with V3O5 being notable for its transition temperature exceeding room temperature. At about 430 K, this material shows a change in crystal symmetry accompanied with one order of magnitude increase in its electrical conductivity and alterations in its optical properties. Although the property changes during the MIT in V3O5 are less pronounced than those observed in VO2, its transition temperature is 90 K higher, making it appealing for applications requiring elevated temperatures. In this article, the high-frequency characteristics were determined in a V3O5 two-terminal device in the range from 5 to 35 GHz. The S-parameters showed that the return loss at room temperature was close to −1.5 dB, and the isolation between ports was approximately −50 dB. At temperatures above the metal–insulator transition, the isolation decreased to around −40 dB at 35 GHz. For S11 and S22, similar behavior was observed at room temperature, with a notable change in the S-parameter phase of the device. This behavior suggests that V3O5 may function well as a capacitor because the considerable change in phase could control the flow of electrical signals in devices. This property also may be used for matching purposes, especially considering its response to temperature changes. Additionally, conductivity calculation from S-parameters shows a decrease of approximately two orders of magnitude at 500 K and one order of magnitude at 300 K compared to DC values. These findings highlight V3O5 potential for integration into radio frequency devices that demand consistent performance in high-temperature environments.
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- Award ID(s):
- 2132700
- PAR ID:
- 10603111
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 137
- Issue:
- 23
- ISSN:
- 0021-8979
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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