Kong, David, Prakash, Shvetank, Kufel, Jedrzej, Kyriazidis, Georgios, Omri, Yasmine, Verity, David, Ozer, Emre, Reddi, Vijay J, and Hills, Gage. 333-eDRAM - 3T Embedded DRAM Leveraging Monolithic 3D Integration of 3 Transistor Types: IGZO, Carbon Nanotube and Silicon FETs. Retrieved from https://par.nsf.gov/biblio/10609415.

Kong, David, Prakash, Shvetank, Kufel, Jedrzej, Kyriazidis, Georgios, Omri, Yasmine, Verity, David, Ozer, Emre, Reddi, Vijay J, & Hills, Gage. 333-eDRAM - 3T Embedded DRAM Leveraging Monolithic 3D Integration of 3 Transistor Types: IGZO, Carbon Nanotube and Silicon FETs. Retrieved from https://par.nsf.gov/biblio/10609415.

Kong, David, Prakash, Shvetank, Kufel, Jedrzej, Kyriazidis, Georgios, Omri, Yasmine, Verity, David, Ozer, Emre, Reddi, Vijay J, and Hills, Gage. "333-eDRAM - 3T Embedded DRAM Leveraging Monolithic 3D Integration of 3 Transistor Types: IGZO, Carbon Nanotube and Silicon FETs". Country unknown/Code not available: IEEE. https://par.nsf.gov/biblio/10609415.

@article{osti_10609415,
place = {Country unknown/Code not available}, title = {333-eDRAM - 3T Embedded DRAM Leveraging Monolithic 3D Integration of 3 Transistor Types: IGZO, Carbon Nanotube and Silicon FETs}, url = {https://par.nsf.gov/biblio/10609415}, abstractNote = {}, journal = {}, publisher = {IEEE}, author = {Kong, David and Prakash, Shvetank and Kufel, Jedrzej and Kyriazidis, Georgios and Omri, Yasmine and Verity, David and Ozer, Emre and Reddi, Vijay J and Hills, Gage}, }