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Title: Extreme bandgap polarization doped AlGaN layers on bulk AlN for pn-diodes with an 8.5 MV cm −1 breakdown field and forward current density exceeding 20 kA cm −2
Abstract In this paper we present a study of distribution polarization doped AlxGa1−xN layers and their use in quasi-vertical configuration pn-diodes which exhibited a high breakdown field of ∼8.5 MV cm−1and a large forward current density (∼23 kA cm−2). We also establish their potential use in UVC light emitters by studying the optical emission from a quantum well inserted at the distribution polarization doped pn-junction interface.  more » « less
Award ID(s):
2246582
PAR ID:
10609472
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
Japanese Journal of Applied Physics
Date Published:
Journal Name:
Japanese Journal of Applied Physics
Volume:
64
Issue:
5
ISSN:
0021-4922
Page Range / eLocation ID:
055507
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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