Palmese, Elia, Xue, Haotian, Rogers, Daniel J, and Wierer, Jonathan J. Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times. Retrieved from https://par.nsf.gov/biblio/10615035. IEEE Electron Device Letters 45.10 Web. doi:10.1109/LED.2024.3440177.

Palmese, Elia, Xue, Haotian, Rogers, Daniel J, & Wierer, Jonathan J. Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times. IEEE Electron Device Letters, 45 (10). Retrieved from https://par.nsf.gov/biblio/10615035. https://doi.org/10.1109/LED.2024.3440177

Palmese, Elia, Xue, Haotian, Rogers, Daniel J, and Wierer, Jonathan J. "Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times". IEEE Electron Device Letters 45 (10). Country unknown/Code not available: IEEE Electron Device Letters. https://doi.org/10.1109/LED.2024.3440177. https://par.nsf.gov/biblio/10615035.

@article{osti_10615035,
place = {Country unknown/Code not available}, title = {Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times}, url = {https://par.nsf.gov/biblio/10615035}, DOI = {10.1109/LED.2024.3440177}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {45}, number = {10}, publisher = {IEEE Electron Device Letters}, author = {Palmese, Elia and Xue, Haotian and Rogers, Daniel J and Wierer, Jonathan J}, }