More Like this

1. GAN-EM: GAN Based EM Learning Framework

   Zhao, Wentian; Wang, Shaojie; Xie, Zhihuai; Shi, Jing; Xu, Chenliang (January 2019, International Joint Conference on Artificial Intelligence)
2. InGaN/GaN microdisks enabled by nanoporous GaN cladding

   https://doi.org/10.1364/OL.43.005567  

   Yuan, Ge; Zhang, Cheng; Xiong, Kanglin; Han, Jung (January 2018, Optics Letters)

   null (Ed.)
3. Cumulant GAN

   https://doi.org/10.1109/TNNLS.2022.3161127  

   Pantazis, Yannis; Paul, Dipjyoti; Fasoulakis, Michail; Stylianou, Yannis; Katsoulakis, Markos A. (April 2022, IEEE Transactions on Neural Networks and Learning Systems)
4. GAN: Dynamics

   Delgadino, M; Suassuna, B; Cabrera, R (May 2024, arxiv)
5. Identity of the shallowest acceptor in GaN

   https://doi.org/10.1103/PhysRevB.111.045202  

   Reshchikov, M A; Demchenko, D O; McEwen, B; Shahedipour-Sandvik, F (January 2025, Physical Review B)

   The Be-related ultraviolet luminescence (UVLBe) band with a maximum at about 3.38 eV in GaN:Be is caused by the shallowest acceptor in GaN with the /0 transition level at 0.113 eV above the valence band. The luminescent properties of this acceptor were studied in detail. First-principles calculations identify this acceptor as the BeGaONBeGa complex. These calculations also predict a deep level, at 0.34 eV above the valence band. However, we were not able to find evidence for this level in photoluminescence experiments. 

   more » « less