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This content will become publicly available on August 1, 2026

Title: GaN Metal Insulator Semiconductor High Electron Mobility Transistors using TiAlO as the gate dielectric
Award ID(s):
2239302
PAR ID:
10623963
Author(s) / Creator(s):
Publisher / Repository:
WOCSEMMAD 2024
Date Published:
Format(s):
Medium: X
Location:
Las Vegas
Sponsoring Org:
National Science Foundation
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