This content will become publicly available on June 10, 2026
Exciton Annihilation by Lanthanide Dopants: An Atomic Probe of Sub-Diffraction Exciton Diffusion in Ferromagnetic CrI 3
- Award ID(s):
- 2308979
- PAR ID:
- 10624084
- Publisher / Repository:
- ACS
- Date Published:
- Journal Name:
- The Journal of Physical Chemistry C
- ISSN:
- 1932-7447
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
Exciton dynamics o perovskite nanoclusters has been investigated or the rst time using emtosecond transient absorption (TA) and time-resolved photoluminescence (TRPL) spectroscopy. The TA results show two photoinduced absorption signals at 420 and 461 nm and a photoinduced bleach (PB) signal at 448 nm. The analysis o the PB recovery kinetic decay and kinetic model uncovered multiple processes contributing to electron−hole recombination. The ast component (∼8 ps) is attributed to vibrational relaxation within the initial excited state, and the medium component (∼60 ps) is attributed to shallow carrier trapping. The slow component is attributed to deep carrier trapping rom the initial conduction band edge (∼666 ps) and the shallow trap state (∼40 ps). The TRPL reveals longer time dynamics, with modeled lietimes o 6.6 and 93 ns attributed to recombination through the deep trap state and direct band edge recombination, respectively. The signicant role o exciton trapping processes in the dynamics indicates that these highly conned nanoclusters have deect-rich suraces.more » « less
-
Due to their atomic thinness with reduced dielectric screening, two-dimensional materials can possess a stable excitonic population at room temperature. This is attractive for future excitonic devices, where excitons are used to carry energy or information. In excitonic devices, controlling transport of the charge-neutral excitons is a key element. Here we show that exciton transport in a MoSe 2 monolayer semiconductor can be effectively controlled by dielectric screening. A MoSe 2 monolayer was partially covered with a hexagonal boron nitride flake. Photoluminescence measurements showed that the exciton energy in the covered region is about 12 meV higher than that in the uncovered region. Spatiotemporally resolved differential reflection measurements performed at the junction between the two regions revealed that this energy offset is sufficient to drive excitons across the junction for about 50 ps over a distance of about 200 nm. These results illustrate the feasibility of using van der Waals dielectric engineering to control exciton transport and contribute to understanding the effects of the dielectric environment on the electronic and optical properties of two-dimensional semiconductors.more » « less
An official website of the United States government
