Zheng, Qi, Qin, Yixin, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Sengupta, Abhronil, Yu, Shimeng, Narayanan, Vijaykrishnan, and Ni, Kai. Synaptic Weight Cell Enabled by Ferroelectric FETs With Gate Side Charge Injection. Retrieved from https://par.nsf.gov/biblio/10628243. IEEE Electron Device Letters 46.7 Web. doi:10.1109/LED.2025.3566673.

Zheng, Qi, Qin, Yixin, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Sengupta, Abhronil, Yu, Shimeng, Narayanan, Vijaykrishnan, & Ni, Kai. Synaptic Weight Cell Enabled by Ferroelectric FETs With Gate Side Charge Injection. IEEE Electron Device Letters, 46 (7). Retrieved from https://par.nsf.gov/biblio/10628243. https://doi.org/10.1109/LED.2025.3566673

Zheng, Qi, Qin, Yixin, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Sengupta, Abhronil, Yu, Shimeng, Narayanan, Vijaykrishnan, and Ni, Kai. "Synaptic Weight Cell Enabled by Ferroelectric FETs With Gate Side Charge Injection". IEEE Electron Device Letters 46 (7). Country unknown/Code not available: IEEE. https://doi.org/10.1109/LED.2025.3566673. https://par.nsf.gov/biblio/10628243.

@article{osti_10628243,
place = {Country unknown/Code not available}, title = {Synaptic Weight Cell Enabled by Ferroelectric FETs With Gate Side Charge Injection}, url = {https://par.nsf.gov/biblio/10628243}, DOI = {10.1109/LED.2025.3566673}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {46}, number = {7}, publisher = {IEEE}, author = {Zheng, Qi and Qin, Yixin and Lim, Suhwan and Kim, Kijoon and Kim, Kwangsoo and Kim, Wanki and Ha, Daewon and Sengupta, Abhronil and Yu, Shimeng and Narayanan, Vijaykrishnan and Ni, Kai}, }