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Characteristics of Single Crystalline Rutile GeO2 Film Grown on Sapphire by Chemical Vapor Deposition with a high growth rate ∼2.2 µm/hr
- Award ID(s):
- 1847964
- PAR ID:
- 10628331
- Publisher / Repository:
- Journal of Alloys and Compounds
- Date Published:
- Journal Name:
- Journal of Alloys and Compounds
- Volume:
- 1014
- Issue:
- C
- ISSN:
- 0925-8388
- Page Range / eLocation ID:
- 178591
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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