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This content will become publicly available on February 1, 2026

Title: Characteristics of Single Crystalline Rutile GeO2 Film Grown on Sapphire by Chemical Vapor Deposition with a high growth rate ∼2.2 µm/hr
Award ID(s):
1847964
PAR ID:
10628331
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
Journal of Alloys and Compounds
Date Published:
Journal Name:
Journal of Alloys and Compounds
Volume:
1014
Issue:
C
ISSN:
0925-8388
Page Range / eLocation ID:
178591
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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