Qin, Yixin, Chakraborty, Saikat, Zhao, Zijian, Ma, Sizhe, Jung, Moonyoung, Kim, Kijoon, Lim, Suhwan, Seo, Kwangyou, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Kulkarni, Jaydeep P, and Ni, Kai. Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage. Retrieved from https://par.nsf.gov/biblio/10629517. Web. doi:10.1109/IRPS48204.2025.10983219.

Qin, Yixin, Chakraborty, Saikat, Zhao, Zijian, Ma, Sizhe, Jung, Moonyoung, Kim, Kijoon, Lim, Suhwan, Seo, Kwangyou, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Kulkarni, Jaydeep P, & Ni, Kai. Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage. Retrieved from https://par.nsf.gov/biblio/10629517. https://doi.org/10.1109/IRPS48204.2025.10983219

Qin, Yixin, Chakraborty, Saikat, Zhao, Zijian, Ma, Sizhe, Jung, Moonyoung, Kim, Kijoon, Lim, Suhwan, Seo, Kwangyou, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Kulkarni, Jaydeep P, and Ni, Kai. "Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage". Country unknown/Code not available: IEEE. https://doi.org/10.1109/IRPS48204.2025.10983219. https://par.nsf.gov/biblio/10629517.

@article{osti_10629517,
place = {Country unknown/Code not available}, title = {Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage}, url = {https://par.nsf.gov/biblio/10629517}, DOI = {10.1109/IRPS48204.2025.10983219}, abstractNote = {}, journal = {}, publisher = {IEEE}, author = {Qin, Yixin and Chakraborty, Saikat and Zhao, Zijian and Ma, Sizhe and Jung, Moonyoung and Kim, Kijoon and Lim, Suhwan and Seo, Kwangyou and Kim, Kwangsoo and Kim, Wanki and Ha, Daewon and Narayanan, Vijaykrishnan and Kulkarni, Jaydeep P and Ni, Kai}, }