Advancement in transistor technologies using GaN, TiO2, and GeSn materials

Zeng, YP

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This content will become publicly available on June 23, 2026

Advancement in transistor technologies using GaN, TiO2, and GeSn materials

Award ID(s):: 2328840

PAR ID:: 10630060

Author(s) / Creator(s):: Zeng, YP

Publisher / Repository:: Device research conference

Date Published:: 2025-06-23

Format(s):: Medium: X

Location:: Duke University, Device Research Conference 2025, June 22-26, 2025

Sponsoring Org:: National Science Foundation

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This content will become publicly available on June 23, 2026
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