This content will become publicly available on September 1, 2026
Enhanced Cooling of Multifinger GaN HEMTs via Topside Diamond Integration
- Award ID(s):
- 2234479
- PAR ID:
- 10632537
- Publisher / Repository:
- IEEE
- Date Published:
- Journal Name:
- IEEE Electron Device Letters
- Volume:
- 46
- Issue:
- 9
- ISSN:
- 0741-3106
- Page Range / eLocation ID:
- 1597 to 1600
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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