Kumar, Mondol Anik, Chatterjee, Indranil, Boykin, Timothy, and Ray, Biswajit. State Dependent Threshold Voltage Shift in Irradiated 64-Layer 3-D NAND Memories. Retrieved from https://par.nsf.gov/biblio/10633359. IEEE Transactions on Nuclear Science 72.8 Web. doi:10.1109/TNS.2025.3556805.

Kumar, Mondol Anik, Chatterjee, Indranil, Boykin, Timothy, & Ray, Biswajit. State Dependent Threshold Voltage Shift in Irradiated 64-Layer 3-D NAND Memories. IEEE Transactions on Nuclear Science, 72 (8). Retrieved from https://par.nsf.gov/biblio/10633359. https://doi.org/10.1109/TNS.2025.3556805

Kumar, Mondol Anik, Chatterjee, Indranil, Boykin, Timothy, and Ray, Biswajit. "State Dependent Threshold Voltage Shift in Irradiated 64-Layer 3-D NAND Memories". IEEE Transactions on Nuclear Science 72 (8). Country unknown/Code not available: IEEE Xplore. https://doi.org/10.1109/TNS.2025.3556805. https://par.nsf.gov/biblio/10633359.

@article{osti_10633359,
place = {Country unknown/Code not available}, title = {State Dependent Threshold Voltage Shift in Irradiated 64-Layer 3-D NAND Memories}, url = {https://par.nsf.gov/biblio/10633359}, DOI = {10.1109/TNS.2025.3556805}, abstractNote = {}, journal = {IEEE Transactions on Nuclear Science}, volume = {72}, number = {8}, publisher = {IEEE Xplore}, author = {Kumar, Mondol Anik and Chatterjee, Indranil and Boykin, Timothy and Ray, Biswajit}, }