Bezugam, SS, Bhattacharya, T, Petschenig, H, Choi, S, Hutchinson, G, Pedretti, G, Sheng, X, Ignowski, J, Van_Vaerenbergh, T, Beausoleil, R, Legenstein, R, and Strukov, D. Controlling ReRAM’s Switching Characteristics with Shadow Memory for Continual Learning. Retrieved from https://par.nsf.gov/biblio/10634111. Web. doi:10.1109/IMW61990.2025.11026884.

Bezugam, SS, Bhattacharya, T, Petschenig, H, Choi, S, Hutchinson, G, Pedretti, G, Sheng, X, Ignowski, J, Van_Vaerenbergh, T, Beausoleil, R, Legenstein, R, & Strukov, D. Controlling ReRAM’s Switching Characteristics with Shadow Memory for Continual Learning. Retrieved from https://par.nsf.gov/biblio/10634111. https://doi.org/10.1109/IMW61990.2025.11026884

Bezugam, SS, Bhattacharya, T, Petschenig, H, Choi, S, Hutchinson, G, Pedretti, G, Sheng, X, Ignowski, J, Van_Vaerenbergh, T, Beausoleil, R, Legenstein, R, and Strukov, D. "Controlling ReRAM’s Switching Characteristics with Shadow Memory for Continual Learning". Country unknown/Code not available: IEEE. https://doi.org/10.1109/IMW61990.2025.11026884. https://par.nsf.gov/biblio/10634111.

@article{osti_10634111,
place = {Country unknown/Code not available}, title = {Controlling ReRAM’s Switching Characteristics with Shadow Memory for Continual Learning}, url = {https://par.nsf.gov/biblio/10634111}, DOI = {10.1109/IMW61990.2025.11026884}, abstractNote = {}, journal = {}, publisher = {IEEE}, author = {Bezugam, SS and Bhattacharya, T and Petschenig, H and Choi, S and Hutchinson, G and Pedretti, G and Sheng, X and Ignowski, J and Van_Vaerenbergh, T and Beausoleil, R and Legenstein, R and Strukov, D}, }