Abstract A new nonheme iron(II) complex, FeII(Me3TACN)((OSiPh2)2O) (1), is reported. Reaction of1with NO(g)gives a stable mononitrosyl complex Fe(NO)(Me3TACN)((OSiPh2)2O) (2), which was characterized by Mössbauer (δ=0.52 mm s−1, |ΔEQ|=0.80 mm s−1), EPR (S=3/2), resonance Raman (RR) and Fe K‐edge X‐ray absorption spectroscopies. The data show that2is an {FeNO}7complex with anS=3/2 spin ground state. The RR spectrum (λexc=458 nm) of2combined with isotopic labeling (15N,18O) reveals ν(N‐O)=1680 cm−1, which is highly activated, and is a nearly identical match to that seen for the reactive mononitrosyl intermediate in the nonheme iron enzyme FDPnor (ν(NO)=1681 cm−1). Complex2reacts rapidly with H2O in THF to produce the N‐N coupled product N2O, providing the first example of a mononuclear nonheme iron complex that is capable of converting NO to N2O in the absence of an exogenous reductant.
more »
« less
Ultrafast Light‐Driven Electronic and Structural Changes in LaFeO 3 Perovskites Probed by Femtosecond X‐Ray Absorption Spectroscopy
Abstract Conducting real‐time, element‐specific studies of photo‐excited systems is a long‐standing challenge. The development of X‐ray free‐electron lasers (XFELs) has paved the way for the emergence of a promising technique: femtosecond X‐ray absorption spectroscopy (fs‐XAS). This powerful technique reveals electronic and geometric characteristics, providing unprecedented insight into their dynamic interactions under nonequilibrium conditions. Herein, the fs‐XAS technique is employed at PAL‐XFEL to unravel light‐driven ultrafast electronic and structural changes in epitaxial lanthanum iron oxide (LaFeO3) thin films. Density functional theory (DFT) and multiplet calculations are utilized to expound on the experimental results. The analyses reveal that photoexcitation initially induces high‐ and intermediate‐spin Fe2+states through ligand‐to‐metal charge transfer (LMCT), followed by polaron formation. It is demonstrated that the reduced overlap between the oxygen 2pand iron 3dorbitals accounts for all experimental observations, including 1) the XAS shifts to lower energies, 2) the decrease in the crystal field splitting, and 3) the relatively larger shifts observed in the oxygen 1sXAS.
more »
« less
- Award ID(s):
- 2309000
- PAR ID:
- 10641091
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 37
- Issue:
- 29
- ISSN:
- 0935-9648
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract Understanding the electronic structures of high‐valent metal complexes aids the advancement of metal‐catalyzed cross coupling methodologies. A prototypical complex with formally high valency is [Cu(CF3)4]−(1), which has a formal Cu(III) oxidation state but whose physical analysis has led some to a Cu(I) assignment in an inverted ligand field model. Recent examinations of1by X‐ray spectroscopies have led previous authors to contradictory conclusions, motivating the re‐examination of its X‐ray absorption profile here by a complementary method, resonant diffraction anomalous fine structure (DAFS). From analysis of DAFS measurements for a series of seven mononuclear Cu complexes including1, here it is shown that there is a systematic trifluoromethyl effect on X‐ray absorption that blue shifts the resonant Cu K‐edge energy by 2–3 eV per CF3, completely accounting for observed changes in DAFS profiles between formally Cu(III) complexes like1and formally Cu(I) complexes like (Ph3P)3CuCF3(3). Thus, in agreement with the inverted ligand field model, the data presented herein imply that1is best described as containing a Cu(I) ion with dncount approaching 10.more » « less
-
Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: ScxGa1−xN/GaN and ScxAl1−xN/AlN grown by molecular beam epitaxy (MBE). In the ScxGa1−xN/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 1019 cm−3, with an increase directly correlated with the scandium content. In the ScxAl1−xN–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al2O3template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 1019and 1021 cm−3, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers.more » « less
-
Abstract Surface chemistry and core composition of 2D MXenes play a major role in their interfacial properties, but the determination and quantification of their bonding environments remain challenging. X‐ray Photoelectron Spectroscopy (XPS) is a method of choice that is broadly utilized but is often hindered by large uncertainties and systematic bias due to adsorbed species such as adventitious carbon or etching residues. In this work, energy‐dependent XPS and depth profile modeling of the Ti3C2TxMXene surface are employed to differentiate the contributions from the MXene and the adsorbed species, thereby increasing the accuracy of quantification. In comparison, uncorrected lab‐based XPS suffers from a systematic overestimation of Ti vacancies by 7% and an underestimation of terminal atoms, particularly F, by as much as 15%. Interestingly, it is found that a simple inelastic mean free path correction is sufficient to address the issue and reveals extremely low defects in Ti3C2TxMXene synthesized using the HF/HCl etching route. Soft X‐ray Absorption Spectroscopy (XAS), supported by Density Functional Theory (DFT) calculations, also demonstrates a high chemical sensitivity of the surface terminations. This work provides novel insights into XPS quantification and the use of XAS for probing the carbide core and surface chemistry of Ti3C2TxMXenes.more » « less
-
Growths of monoclinic (AlxGa1−x)2O3thin films up to 99% Al contents are demonstrated via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the Ga precursor. The utilization of TMGa, rather than triethylgallium, enables a significant improvement of the growth rates (>2.5 μm h−1) of β‐(AlxGa1−x)2O3thin films on (010), (100), and (01) β‐Ga2O3substrates. By systematically tuning the precursor molar flow rates, growth of coherently strained phase pure β‐(AlxGa1−x)2O3films is demonstrated by comprehensive material characterizations via high‐resolution X‐ray diffraction (XRD) and atomic‐resolution scanning transmission electron microscopy (STEM) imaging. Monoclinic (AlxGa1−x)2O3films with Al contents up to 99, 29, and 16% are achieved on (100), (010), and (01) β‐Ga2O3substrates, respectively. Beyond 29% of Al incorporation, the (010) (AlxGa1−x)2O3films exhibit β‐ to γ‐phase segregation. β‐(AlxGa1−x)2O3films grown on (01) β‐Ga2O3show local segregation of Al along (100) plane. Record‐high Al incorporations up to 99% in monoclinic (AlxGa1−x)2O3grown on (100) Ga2O3are confirmed from XRD, STEM, electron nanodiffraction, and X‐ray photoelectron spectroscopy measurements. These results indicate great promises of MOCVD development of β‐(AlxGa1−x)2O3films and heterostructures with high Al content and growth rates using TMGa for next‐generation high‐power and high‐frequency electronic devices.more » « less
An official website of the United States government
