Gohel, Khush, Mukhopadhyay, Swarnav, Imran_Roya, Rajnin, Sanyal, Surjava, Alam, Md Tahmidul, Chen, Jonathan, Bai, Ruixin, Wang, Guangying, Pasayat, Shubhra, and Gupta, Chirag. >2.7 kV Al0.65Ga0.35N Channel HEMT on Bulk AlN Substrate With >400 MW/cm² Baliga Figure of Merit. Retrieved from https://par.nsf.gov/biblio/10647763. IEEE Electron Device Letters 46.11 Web. doi:10.1109/LED.2025.3606251.

Gohel, Khush, Mukhopadhyay, Swarnav, Imran_Roya, Rajnin, Sanyal, Surjava, Alam, Md Tahmidul, Chen, Jonathan, Bai, Ruixin, Wang, Guangying, Pasayat, Shubhra, & Gupta, Chirag. >2.7 kV Al0.65Ga0.35N Channel HEMT on Bulk AlN Substrate With >400 MW/cm² Baliga Figure of Merit. IEEE Electron Device Letters, 46 (11). Retrieved from https://par.nsf.gov/biblio/10647763. https://doi.org/10.1109/LED.2025.3606251

Gohel, Khush, Mukhopadhyay, Swarnav, Imran_Roya, Rajnin, Sanyal, Surjava, Alam, Md Tahmidul, Chen, Jonathan, Bai, Ruixin, Wang, Guangying, Pasayat, Shubhra, and Gupta, Chirag. ">2.7 kV Al0.65Ga0.35N Channel HEMT on Bulk AlN Substrate With >400 MW/cm² Baliga Figure of Merit". IEEE Electron Device Letters 46 (11). Country unknown/Code not available: IEEE Electron Device Letters. https://doi.org/10.1109/LED.2025.3606251. https://par.nsf.gov/biblio/10647763.

@article{osti_10647763,
place = {Country unknown/Code not available}, title = {>2.7 kV Al0.65Ga0.35N Channel HEMT on Bulk AlN Substrate With >400 MW/cm² Baliga Figure of Merit}, url = {https://par.nsf.gov/biblio/10647763}, DOI = {10.1109/LED.2025.3606251}, abstractNote = {Not Available}, journal = {IEEE Electron Device Letters}, volume = {46}, number = {11}, publisher = {IEEE Electron Device Letters}, author = {Gohel, Khush and Mukhopadhyay, Swarnav and Imran_Roya, Rajnin and Sanyal, Surjava and Alam, Md Tahmidul and Chen, Jonathan and Bai, Ruixin and Wang, Guangying and Pasayat, Shubhra and Gupta, Chirag}, }