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This content will become publicly available on March 16, 2026

Title: Design of Low Parasitic Inductance GaN HEMT Flip-Chip Power Module
Award ID(s):
2327474
PAR ID:
10653022
Author(s) / Creator(s):
 ;  ;  ;  ;  
Publisher / Repository:
IEEE
Date Published:
Page Range / eLocation ID:
1844 to 1849
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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