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1. Superconductivity and Pronounced Electron‐Phonon Coupling in Rock‐Salt Al _1−x O _1−x and Ti _1−x O _1−x

   https://doi.org/10.1002/aelm.202400141  

   Žguns, Pjotrs; Gedik, Nuh; Yildiz, Bilge; Li, Ju (May 2024, Advanced Electronic Materials)

   Abstract The highest ambient‐pressure Tc among binary compounds is 40 K (MgB2). Higher Tc is achieved in high‐pressure hydrides or multielement cuprates. Alternatively, are explored superconducting properties of binary, metastable sub‐oxides, that may emerge under extremely low oxygen partial pressure. The emphasis is on the rock‐salt structure, which is known to promote superconductivity, and exploring AlO, ScO, TiO, and NbO. Dynamic lattice stability is achieved by introducing metal and oxygen vacancies in the fashion of Nb_1−xO_1−x‐type structure (x = ¼). The electron‐phonon (e‐ph) coupling is remarkably large in Al_1−xO_1−xand Ti_1−xO_1−x(λ ≈ 2 at x = ¼), with Tc ≈ 35 K according to the Allen–Dynes equation. Significantly, the coupling strength is comparable to that in high‐pressure hydrides, yet, in contrast to hydrides and MgB2, the coupling is largely driven by low frequency phonons. Sc_1−xO_1−xand Nb_1−xO_1−xshow significantly smaller λ and Tc. Further, hydrogen intercalation to boost λ and Tc is investigated. Only Ti_1−x(O_1−xHx) and Nb_1−x(O_1−xHx) are dynamically stable upon intercalation, where H, respectively, decreases and increases Tc. The effect of H doping on electronic structure and Tc is discussed. Altogether, the study suggests that metal sub‐oxides are promising compounds to achieve strong e‐ph coupling at ambient pressure. 

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2. Phase segregation and miscibility of TiO _x nanocomposites in Gd-doped ceria solid electrolyte material

   https://doi.org/10.1107/S1600577523003636  

   Li, Junying; Routh, Prahlad K; Li, Yuanyuan; Plonka, Anna; Makagon, Evgeniy; Lubomirsky, Igor; Frenkel, Anatoly (July 2023, Journal of Synchrotron Radiation)

   Electro-chemo-mechanical (ECM) coupling refers to mechanical deformation due to electrochemically driven compositional change in a solid. An ECM actuator producing micrometre-size displacements and long-term stability at room temperature was recently reported, comprising a 20 mol% Gd-doped ceria (20GDC), a solid electrolyte membrane, placed between two working bodies made of TiO_x/20GDC (Ti-GDC) nanocomposites with Ti concentration of 38 mol%. The volumetric changes originating from oxidation or reduction in the local TiO_xunits are hypothesized to be the origin of mechanical deformation in the ECM actuator. Studying the Ti concentration-dependent structural changes in the Ti-GDC nanocomposites is therefore required for (i) understanding the mechanism of dimensional changes in the ECM actuator and (ii) maximizing the ECM response. Here, the systematic investigation of the local structure of the Ti and Ce ions in Ti-GDC over a broad range of Ti concentrations using synchrotron X-ray absorption spectroscopy and X-ray diffraction is reported. The main finding is that, depending on the Ti concentration, Ti atoms either form a cerium titanate or segregate into a TiO₂anatase-like phase. The transition region between these two regimes with Ti(IV) concentration between 19% and 57% contained strongly disordered TiO_xunits dispersed in 20GDC containing Ce(III) and Ce(IV) and hence rich with oxygen vacancies. As a result, this transition region is proposed to be the most advantageous for developing ECM-active materials. 

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3. Block copolymer-mediated synthesis of TiO2/RuO2 nanocomposite for efficient oxygen evolution reaction

   https://doi.org/10.1007/s10853-024-09702-5  

   KC, Binod Raj; Kumar, Dhananjay; Bastakoti, Bishnu Prasad (June 2024, Journal of Materials Science)

   Abstract An amphiphilic block copolymer, poly (styrene-2-polyvinyl pyridine-ethylene oxide), was used as a structure-directing and stabilizing agent to synthesize TiO₂/RuO₂nanocomposite. The strong interaction of polymers with metal precursors led to formation of a porous heterointerface of TiO₂/RuO₂. It acted as a bridge for electron transport, which can accelerate the water splitting reaction. Scanning electron microscopy, energy-dispersiveX-ray spectroscopy, transmission electron microscopy, andX-ray diffraction analysis of TiO₂/RuO₂samples revealed successful fabrication of TiO₂/RuO₂nanocomposites. The TiO₂/RuO₂nanocomposites were used to measure electrochemical water splitting in three-electrode systems in 0.1-M KOH. Electrochemical activities unveil that TiO₂/RuO₂-150 nanocomposites displayed superior oxygen evolution reaction activity, having a low overpotential of 260 mV with a Tafel slope of 80 mVdec⁻¹. Graphical abstract 

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4. High performance AlGaN/GaN MISHEMTs using N ₂ O treated TiO ₂ as the gate dielectric

   https://doi.org/10.1088/1361-6641/ad96dc  

   Zhama, Tuofu; Cui, Peng; Chen, Zijun; Zhang, Jie; Zhao, Haochen; Wei, Lincheng; Sharma, Ashwani; Bakaul, Saidur; Zeng, Yuping (December 2024, Semiconductor Science and Technology)

   Abstract In this work, TiO₂thin films deposited by the atomic layer deposition (ALD) method were treated with a special N₂O plasma surface treatment and used as the gate dielectric for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The N₂O plasma surface treatment effectively reduces defects in the oxide during low-temperature ALD growth. In addition, it allows oxygen atoms to diffuse into the device cap layer to increase the barrier height and thus reduce the gate leakage current. These TiO₂films exhibit a dielectric constant of 54.8 and a two-terminal current of 1.96 × 10⁻¹⁰A mm⁻¹in 2μm distance. When applied as the gate dielectric, the AlGaN/GaN MISHEMT with a 2μm-gate-length shows a high on/off ratio of 2.59 × 10⁸and a low subthreshold slope (SS) of 84 mV dec⁻¹among all GaN MISHEMTs using TiO₂as the gate dielectric. This work provides a feasible way to significantly improve the TiO₂film electrical property for gate dielectrics, and it suggests that the developed TiO₂dielectric is a promising high-κgate oxide and a potential passivation layer for GaN-based MISHEMTs, which can be further extended to other transistors. 

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5. Efficient TE-polarized mode coupling between a plasmonic tunnel junction and a photonic waveguide

   https://doi.org/10.1364/OE.543072  

   Upcraft, Daniel; Vaz, Daniel; Youngblood, Nathan; Oh, Sang-Hyun (January 2024, Optics Express)

   Nanoscale plasmonic gaps are useful structures both electrically, for creating quantum tunnel junctions, and optically, for confining light. Inelastic tunneling of electrons in a tunnel junction is an attractive source of light due to the ultrafast response rate granted by the tunneling time of electrons in the system as well as the compact dimensions. A main hurdle for these light emitting tunnel junctions, however, is their low external efficiency given by both low electron-to-plasmon conversion as well as low plasmon-to-photon conversion. Inversely, coupling light into a nanogap for high confinement and field enhancement can be difficult due to the size mismatches involved. We show a 3 nm gap metal-insulator-metal plasmonic tunnel junction evanescently coupled to the fundamental TE mode of a standard silicon waveguide in a tapered directional coupler configuration with a transmission efficiency of 54.8% atλ =1.55μm and a 3-dB coupling bandwidth of 705 nm. In the inverse configuration, we show an electric field enhancement of |E|/|E₀| ≈120 within a plasmonic tunnel junction in the technologically important optical telecommunications band. 

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