Xu, Ying, Sun, Yiyuan, Zhou, Zuopu, Zheng, Zijie, Luo, Sheng, Liu, Gan, Sun, Chen, Kang, Yuye, Ni, Kai, Liang, Gengchiau, and Gong, Xiao. BEOL-Compatible Co-Sputtered Te1-xSex p-FETs With Bandgap Engineering Enabling Monolithic 3-D CMOS Logic and Memory. Retrieved from https://par.nsf.gov/biblio/10663204. IEEE Transactions on Electron Devices 72.12 Web. doi:10.1109/TED.2025.3612914.

Xu, Ying, Sun, Yiyuan, Zhou, Zuopu, Zheng, Zijie, Luo, Sheng, Liu, Gan, Sun, Chen, Kang, Yuye, Ni, Kai, Liang, Gengchiau, & Gong, Xiao. BEOL-Compatible Co-Sputtered Te1-xSex p-FETs With Bandgap Engineering Enabling Monolithic 3-D CMOS Logic and Memory. IEEE Transactions on Electron Devices, 72 (12). Retrieved from https://par.nsf.gov/biblio/10663204. https://doi.org/10.1109/TED.2025.3612914

Xu, Ying, Sun, Yiyuan, Zhou, Zuopu, Zheng, Zijie, Luo, Sheng, Liu, Gan, Sun, Chen, Kang, Yuye, Ni, Kai, Liang, Gengchiau, and Gong, Xiao. "BEOL-Compatible Co-Sputtered Te1-xSex p-FETs With Bandgap Engineering Enabling Monolithic 3-D CMOS Logic and Memory". IEEE Transactions on Electron Devices 72 (12). Country unknown/Code not available: IEEE Transaction on Electron Devices. https://doi.org/10.1109/TED.2025.3612914. https://par.nsf.gov/biblio/10663204.

@article{osti_10663204,
place = {Country unknown/Code not available}, title = {BEOL-Compatible Co-Sputtered Te1-xSex p-FETs With Bandgap Engineering Enabling Monolithic 3-D CMOS Logic and Memory}, url = {https://par.nsf.gov/biblio/10663204}, DOI = {10.1109/TED.2025.3612914}, abstractNote = {Not Available}, journal = {IEEE Transactions on Electron Devices}, volume = {72}, number = {12}, publisher = {IEEE Transaction on Electron Devices}, author = {Xu, Ying and Sun, Yiyuan and Zhou, Zuopu and Zheng, Zijie and Luo, Sheng and Liu, Gan and Sun, Chen and Kang, Yuye and Ni, Kai and Liang, Gengchiau and Gong, Xiao}, }