Magnetic topological semimetals allow for an effective control of the topological electronic states by tuning the spin configuration. Among them, Weyl nodal line semimetals are thought to have the greatest tunability, yet they are the least studied experimentally due to the scarcity of material candidates. Here, using a combination of angle-resolved photoemission spectroscopy and quantum oscillation measurements, together with density functional theory calculations, we identify the square-net compound EuGa4as a magnetic Weyl nodal ring semimetal, in which the line nodes form closed rings near the Fermi level. The Weyl nodal ring states show distinct Landau quantization with clear spin splitting upon application of a magnetic field. At 2 K in a field of 14 T, the transverse magnetoresistance of EuGa4exceeds 200,000%, which is more than two orders of magnitude larger than that of other known magnetic topological semimetals. Our theoretical model suggests that the non-saturating magnetoresistance up to 40 T arises as a consequence of the nodal ring state.
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This content will become publicly available on February 1, 2027
Extreme Transverse Magnetoresistance in TiZn 16
ABSTRACT Extreme magnetoresistance (XMR) is a phenomenon characterized by an increase in resistance by factors of 104–107% when a magnetic field is applied. This phenomenon is found in a number of semimetals such as WTe2, PtSn4, Cd3As2, and LaSb. The origin of XMR is still hotly debated, possibly with different materials having different (or multiple) explanations. Extreme transverse magnetoresistance of up to 8000% at 14 T and 1.8 K is measured in TiZn16, a semimetal with a multitude of bands crossing the Fermi energy, akin to PtSn4. The magnetoresistance is suppressed when the magnetic field is rotated to be parallel to the applied current, similar to PtSn4and PdSn4. The resistance of TiZn16follows Kohler's rule, but displays different behavior under an applied transverse field and under a longitudinal magnetic field, suggesting distinct electrical phases. Also present are Shubnikov‐de Haas and de Haas‐van Alphen oscillations with a transverse magnetic field up to 43 T, showing that despite an insulator‐like temperature‐resistance curve, charge carriers are still present. This positions TiZn16as an interesting addition to the investigation of XMR materials as a multi‐band metal with complex Fermi surface geometries.
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- Award ID(s):
- 2337535
- PAR ID:
- 10670525
- Publisher / Repository:
- Advanced Electronic Materials
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 12
- Issue:
- 3
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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