The ability to observe astronomical events through the detection of gravitational waves relies on the quality of multilayer coatings used on the optical mirrors of interferometers. Amorphous Ta2O5 (including TiO2:Ta2O5) currently limits detector sensitivity due to high mechanical loss. In this paper, mechanical loss measured at both cryogenic and room temperatures of amorphous Ta2O5 films grown by magnetron sputtering and annealed in air at 500 ◦C is shown to decrease for elevated growth temperature. Films grown at 310 ◦C and annealed yield a mechanical loss of 3.1×10−4 at room temperature, the lowest value reported for pure amorphous Ta2O5 grown by magnetron sputtering to date, and comparable to the lowest values obtained for films grown by ion beam sputtering. Additionally, the refractive index n increases 6% for elevated growth temperature, which could lead to improved sensitivity of gravitational-wave detectors by allowing a thickness reduction in the mirrors’ coatings. Structural characterization suggests that the observed mechanical loss reduction in amorphous Ta2O5 films with increasing growth temperature correlates with a reduction in the coordination number between oxygen and tantalum atoms, consistent with TaOx polyhedra with increased corner-sharing and reduced edge- and facesharing structures.
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This content will become publicly available on January 1, 2027
Network structure of amorphous TiO2 -doped GeO2 via atomistic model and simulations of the Raman activity
In the pursuit of identifying improved amorphous oxide coatings for gravitational wave detector test masses, 44% Ti-doped GeO2 has emerged as a potential candidate due to its low mechanical loss [Vajente et al. Phys. Rev. Lett. 127, 071101 (2021)]. It has been proposed and experimentally demonstrated that a reduction in mechanical loss in amorphous oxides is associated with medium-range order (MRO) dominated by cornersharing links in the amorphous network. In this work, we describe a combined experimental and theoretical approach to investigate the MRO of Ti-doped GeO2. Using atomistic modeling and simulations, we calculate the Raman spectrum of 44% Ti-doped GeO2, and we show that it predicts the main features observed in the experiments and further provides insight into the MRO, which would otherwise be hidden. It is shown that the amorphous oxide mixture exhibits a distribution of predominantly large (>4 member) rings formed by corner-shared tetrahedral Ge-O-Ti connections. It is also shown that the addition of Ti to a-GeO2 does not largely compromise corner-sharing connections, as the smaller populations of Ti-O-Ti and Ge-O-Ge links in the network are predominantly corner-shared. The mainly covalently bonded representation of the MRO of Ti-doped GeO2 revealed by this analysis validates the importance of the MRO network organization in influencing mechanical loss in amorphous oxides.
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- Award ID(s):
- 2110101
- PAR ID:
- 10671717
- Publisher / Repository:
- NA
- Date Published:
- Journal Name:
- Physical Review Materials
- Volume:
- 10
- Issue:
- 1
- ISSN:
- 2475-9953
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Amorphous thin films of Ti doped GeO2are of interest for coatings of the mirrors in gravitational wave detectors (GWDs) due to their low internal friction (Vajenteet al2021Phys. Rev. Lett.127071101). The addition of Ti to amorphous GeO2(a-GeO2) enables tailoring of the optical and structural properties of the mixtures. However, the specific modifications that occur in the amorphous network with the addition of Ti are not known. In this work, x-ray photoelectron spectroscopy is used to identify modifications to the bonding of Ge and Ti atoms in mixtures of Ti dopeda-GeO2with different Ti cation content. The formation of (Ti–O–Ge) bonds is evidenced from: (1) the presence of a peak which intensity increases with Ti content and causes a shift to lower binding energy (BE) of the core level O 1speak; (2) the shift to higher BE of the Ti 2p3/2peak and a decrease in the energy split; and (3) the shift to lower BE of the Ge 3d5/2peak and increase in the energy split. These changes reflect modifications to the bonding when Ge replaces Ti in Ti–O–Ti bonds and Ti replaces Ge in Ge–O–Ge bonds due to their difference in electronegativity. A decrease in the O–O nearest-neighbour distance due to the incorporation of Ti atom is also observed from the broadening of the valence band spectra. The results show the 0.44 Ti dopeda-GeO2mixture has a balance between the (Ti–O–Ge) and the (Ge–O–Ge) networks, not observed in Ti poor and Ti rich mixtures. This finding could have important consequences in the optimisation of amorphous Ti dopeda-GeO2mixtures for low internal friction coatings of GWDs.more » « less
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