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We experimentally demonstrate a low-cost transfer process of GeSn ribbons to insulating substrates for short-wave infrared (SWIR) sensing/imaging applications. By releasing the original compressive GeSn layer to nearly fully relaxed state GeSn ribbons, the room-temperature spectral response of the photodetector is further extended to 3.2 μm, which can cover the entire SWIR range. Compared with the as-grown GeSn reference photodetectors, the fabricated GeSn ribbon photodetectors have a fivefold improvement in the light-to-dark current ratio, which can improve the detectivity for high-performance photodetection. The transient performance of a GeSn ribbon photodetector is investigated with a rise time of about 40 μs, which exceeds the response time of most GeSn (Ge)-related devices. In addition, this transfer process can be applied on various substrates, making it a versatile technology that can be used for various applications ranging from optoelectronics to large-area electronics. These results provide insightful guidance for the development of low-cost and high-speed SWIR photodetectors based on Sn-containing group IV low-dimensional structures.
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Heterojunction Engineering of All-Inorganic CsPbI3 Perovskite for High-Responsivity SWIR Photodetectors Performed at Room Temperature
Short-wave infrared (SWIR) light, 0.9–2.5 μm wavelengths, has widespread applications, including inspection processes, nighttime imaging, and machine vision. As such, there is increasing demand for practical and effective SWIR detectors. Many current SWIR photodetectors are based on high-cost materials and require cryogenic cooling. Perovskite materials, including CsPbI3, have been effectively used as photodetectors in the UV to near IR ranges, but their large bandgaps limit their use for lower energy SWIR light. In this report we introduce an all-inorganic perovskite photodetector based on CsPbI3 with heterojunction engineering for efficient and practical detection in the SWIR range at room temperature. The devices undergo a simple, solution-based fabrication process which includes spin-coating under ambient conditions and moderate annealing temperatures. Without additional cooling, the SWIR devices produce excellent results at room temperature with responsivity of 1.65 × 103 A W−1 and a specific detectivity of 8.0 × 1010 Jones under 0.28 mW cm−2 of 1310 nm light and bias of −5 V. This material shows not only high response but also high sensitivity, making it stand out in the field of SWIR photodetection with the additional benefits of low-cost production and room temperature operation.
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- Award ID(s):
- 2045084
- PAR ID:
- 10673839
- Publisher / Repository:
- Scilight
- Date Published:
- Journal Name:
- Materials and Interfaces
- ISSN:
- 2982-2394
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.53941/mi.2025.100023
