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Abstract Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic phase shifting and modulation. Its CMOS-compatibility could facilitate large-scale production of integrated photonic modulators, and it exhibits an enhanced second-order optical nonlinearity compared to intrinsic AlN, indicating the possibility for efficient modulation. Here, we measure the electro-optic effect in Al0.80Sc0.20N-based phase shifters. We utilized the TM0 mode, allowing use of ther33electro-optic coefficient, and demonstratedVπLaround 750 V cm. Since the electro-optic response is smaller than expected, we discuss potential causes for the reduced response and future outlook for AlScN-based photonics.
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This content will become publicly available on November 6, 2026
Full-core antimony sulfide platform for reconfigurable on-chip photonics
Chalcogenide phase-change materials exhibit large, reversible index shifts that promise nonvolatile, energy-efficient photonic technologies. Yet, current implementations either rely on ultrathin, lossy films integrated with passive Si/SiN waveguides, limiting index modulation, or exploit direct laser writing for localized switching, at the expense of strong optical confinement. Here we demonstrate an antimony trisulfide (Sb2S3) waveguide platform where the material itself forms the guiding core. The proposed architecture theoretically supports substantial modulation of both effective index and absorption, thereby providing a robust platform for the realization of reconfigurable and densely integrated photonic devices.
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- Award ID(s):
- 2217453
- PAR ID:
- 10679097
- Publisher / Repository:
- OPTICA
- Date Published:
- Journal Name:
- Optics Letters
- Volume:
- 50
- Issue:
- 22
- ISSN:
- 0146-9592
- Page Range / eLocation ID:
- 7011
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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