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1. Selective Wet and Dry Etching of NiO over β-Ga ₂ O ₃

   https://doi.org/10.1149/2162-8777/ac94a0  

   Chiang, Chao-Ching; Xia, Xinyi; Li, Jian-Sian; Ren, Fan; Pearton, S. J. (October 2022, ECS Journal of Solid State Science and Technology)

   Patterning of NiO/Ga 2 O 3 heterojunctions requires development of selective wet and dry etch processes. Solutions of 1:4 HNO 3 :H 2 O exhibited measurable etch rates for NiO above 40 °C and activation energy for wet etching of 172.9 kJ.mol −1 (41.3 kCal.mol −1 , 1.8 eV atom −1 ), which is firmly in the reaction-limited regime. The selectivity over β -Ga 2 O 3 was infinite for temperatures up to 55 °C. The strong negative enthalpy for producing the etch product Ga(OH) 4 suggests HNO 3 -based wet etching of NiO occurs via formation and dissolution of hydroxides. For dry etching, Cl 2 /Ar Inductively Coupled Plasmas produced etch rates for NiO up to 800 Å.min −1 , with maximum selectivities of <1 over β -Ga 2 O 3 . The ion energy threshold for initiation of etching of NiO was ∼55 eV and the etch mechanism was ion-driven, as determined the linear dependence of etch rate on the square root of ion energy incident on the surface. 

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2. Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga ₂ O ₃ in BCl ₃

   https://doi.org/10.1149/2162-8777/ac9ff3  

   Chiang, Chao-Ching; Xia, Xinyi; Li, Jian-Sian; Ren, Fan; Pearton, S. J. (November 2022, ECS Journal of Solid State Science and Technology)

   BCl 3 is an attractive plasma etchant for oxides because it is a Lewis acid used to scavenge native oxides on many semiconductors due to the strong B–O bonding. We investigated BCl 3 -based dry etching of the NiO/Ga 2 O 3 heterojunction system. BCl 3 /Ar Inductively Coupled Plasmas produced maximum etch rates for NiO up to 300 Å.min −1 and 800 Å.min −1 for β -Ga 2 O 3 under moderate plasma power conditions suitable for low damage pattern transfer. The selectivity for NiO: Ga 2 O 3 was <1 under all conditions. The ion energy threshold for initiation of etching of NiO was between 35–60 eV, depending on the condition and the etch mechanism was ion-driven, as determined by the linear dependence of etch rate on the square root of ion energy incident on the surface. By sharp contrast, the etching of Ga 2 O 3 had a stronger chemical component, without a well-defined ion energy threshold. The as-etched NiO and Ga 2 O 3 surfaces show chlorine residues, which can be removed on both materials by the standard 1NH 4 OH: 10H 2 O or 1HCl: 10H 2 O rinses used for native oxide removal. According to the location of the Cl 2p 3/2 peak, the Cl is ionically bonded. 

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3. Plasma damage-free in situ etching of β-Ga2O3 using solid-source gallium in the LPCVD system

   https://doi.org/10.1063/5.0277909  

   Khan, Saleh Ahmed; Ibreljic, Ahmed; Bhuiyan, Anhar (September 2025, Applied Physics Letters)

   This work demonstrates an in situ etching technique for β-Ga2O3 using solid-source metallic gallium (Ga) in a low-pressure chemical vapor deposition (LPCVD) system, enabling clean, anisotropic, plasma damage-free etching. Etching behavior was systematically studied on (2¯01) β-Ga2O3 films and patterned (010) β-Ga2O3 substrates as a function of temperature (1000–1100 °C), Ar carrier gas flow (80–400 sccm) and Ga source-to-substrate distance (1–5 cm). The process exhibits vapor transport- and surface-reaction-limited behavior, with etch rates reaching a maximum of ∼2.25 µm/h on (010) substrates at 1050 °C and 2 cm spacing. Etch rates decrease sharply with increasing source-to-substrate distance due to reduced Ga vapor availability, while elevated temperatures enhance surface reaction kinetics through increased Ga reactivity and suboxide formation, leading to enhanced etch rates. In-plane anisotropy studies using radial trench patterns reveal that the (100) orientation produces the most stable etch front, characterized by smooth, vertical sidewalls and minimal lateral etching, consistent with its lowest surface free energy. In contrast, orientations such as (101), which possess higher surface energy, exhibit pronounced lateral etching and micro-faceting. As the trench orientation progressively deviates from (100), lateral etching increases. Facet evolution is observed between (100) and (1¯02), where stepped sidewalls composed of alternating (100) and (1¯02) segments progressively transition into a single inclined facet, which stabilizes along (100) or (1¯02) depending on the trench orientation. The (100)-aligned fins exhibit minimal bottom curvature, while (201)-aligned structures display increased under-etching and trench rounding. Collectively, these findings establish LPCVD-based in situ etching as a scalable, damage-free, and orientation-selective technique for fabricating high-aspect-ratio β-Ga2O3 3D structures in next-generation power devices. 

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4. A cellular automata simulation of atomic layer etching

   https://doi.org/10.1117/12.2297435  

   Bonnecaze, Roger T.; Chopra, Meghali J.; Strotmann, Jan (March 2018, Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII)

   A two-dimensional, cellular automata model for atomic layer etching (ALE) is presented and used to predict the etch rate and the evolution of the roughness of various surfaces as a function of the efficiencies or probabilities of the adsorption and removal steps in the ALE process. The atoms of the material to be etched are initially placed in a two-dimensional array several layers thick. The etch follows the two step process of ALE. First, the initial reaction step (e.g., Cl reacting with Si) is assumed to occur at 100% efficiency activating the exposed, surface atoms; that is, all exposed atoms react with the etching gas. The second reaction step (e.g., Ar ion bombardment or sputtering) occurs with efficiencies that are assumed to vary depending on the exposure of the surface atoms relative to their neighbors and on the strength of bombardment. For sufficiently high bombardment or sputtering, atoms below the activated surface atoms can also be removed, which gives etch rates greater than one layer per ALE cycle. The bounds on the efficiencies of the second removal step are extracted from experimental measurements and fully detailed molecular dynamics simulations from the literature. A trade-off is observed between etch rate and surface roughness as the Ar ion bombardment is increased. 

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5. Li ₂ MnO ₃ : A Catalyst for a Liquid Cl ₂ Electrode in Low‐Temperature Aqueous Batteries

   https://doi.org/10.1002/adma.202302595  

   Sui, Yiming; Zhuo, Zengqing; Lei, Ming; Wang, Lu; Yu, Mingliang; Scida, Alexis M; Sandstrom, Sean K; Stickle, William; O'Larey, Timothy D; Jiang, De‐e; et al (November 2023, Advanced Materials)

   Abstract Li₂MnO₃has been contemplated as a high‐capacity cathode candidate for Li‐ion batteries; however, it evolves oxygen during battery charging under ambient conditions, which hinders a reversible reaction. However, it is unclear if this irreversible process still holds under subambient conditions. Here, the low‐temperature electrochemical properties of Li₂MnO₃in an aqueous LiCl electrolyte are evaluated and a reversible discharge capacity of 302 mAh g⁻¹at a potential of 1.0 V versus Ag/AgCl at −78 °C with good rate capability and stable cycling performance, in sharp contrast to the findings in a typical Li₂MnO₃cell cycled at room temperature, is observed. However, the results reveal that the capacity does not originate from the reversible oxygen oxidation in Li₂MnO₃but the reversible Cl₂(l)/Cl⁻(aq.) redox from the electrolyte. The results demonstrate the good catalytic properties of Li₂MnO₃to promote the Cl₂/Cl⁻redox at low temperatures. 

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