Abstract Dissipative Kerr solitons from optical microresonators, commonly referred to as soliton microcombs, have been developed for a broad range of applications, including precision measurement, optical frequency synthesis, and ultra-stable microwave and millimeter wave generation, all on a chip. An important goal for microcombs is self-referencing, which requires octave-spanning bandwidths to detect and stabilize the comb carrier envelope offset frequency. Further, detection and locking of the comb spacings are often achieved using frequency division by electro-optic modulation. The thin-film lithium niobate photonic platform, with its low loss, strong second- and third-order nonlinearities, as well as large Pockels effect, is ideally suited for these tasks. However, octave-spanning soliton microcombs are challenging to demonstrate on this platform, largely complicated by strong Raman effects hindering reliable fabrication of soliton devices. Here, we demonstrate entirely connected and octave-spanning soliton microcombs on thin-film lithium niobate. With appropriate control over microresonator free spectral range and dissipation spectrum, we show that soliton-inhibiting Raman effects are suppressed, and soliton devices are fabricated with near-unity yield. Our work offers an unambiguous method for soliton generation on strongly Raman-active materials. Further, it anticipates monolithically integrated, self-referenced frequency standards in conjunction with established technologies, such as periodically poled waveguides and electro-optic modulators, on thin-film lithium niobate.
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Stable gigahertz- and mmWave-repetition-rate soliton microcombs on X-cut lithium niobate
Soliton microcombs are a cornerstone of integrated frequency comb technologies, with applications spanning photonic computing, ranging, microwave synthesis, optical communications, and quantum light generation. In nearly all such applications, electro-optic (EO) components play a critical role in generating, monitoring, stabilizing, and modulating solitons. Toward building photonic integrated circuits for next-generation applications that will simultaneously maximize system performance and minimize size, weight, and power consumption metrics, achieving soliton microcombs and efficient EO modulation on a chip is essential. X-cut thin-film lithium niobate (TFLN) has emerged as a leading photonic platform for the realization of high-performance integrated EO devices and systems. However, despite extensive research, soliton microcombs have remained elusive to X-cut TFLN due to its multiple strong Raman-active modes, in-plane refractive index anisotropy, and photorefractive effects. Here, we address this long-standing challenge and demonstrate versatile soliton microcombs on X-cut TFLN, with repetition rates spanning from the gigahertz (∼26GHz, single soliton) up to the millimeter-wave (∼0.156THz, soliton crystal) regime. The combs feature exceptional long-term stability, maintaining a direct injection-locked state for over 90 min (manually terminated), with repetition-rate phase noise closely tracking that of a high-quality electronic microwave synthesizer. Our finding broadly advances both the fundamental science and practical applications of integrated comb sources by enabling efficient EO modulation and broadband coherent solitons to be monolithically combined on the same chip.
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- Award ID(s):
- 2407727
- PAR ID:
- 10696258
- Publisher / Repository:
- please see the file
- Date Published:
- Journal Name:
- Optica
- Volume:
- 12
- Issue:
- 5
- ISSN:
- 2334-2536
- Page Range / eLocation ID:
- 693
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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