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Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and non-uniform size distribution. To overcome these challenges, forming QDs using photoelectrochemical (PEC) etching with coherent light has been developed. Anisotropic etching of InGaN thin films is demonstrated here with PEC etching. InGaN films are etched in dilute H2SO4 and exposed to a pulsed 445 nm laser with a 100 mW/cm2 average power density. Two potentials (0.4 V or 0.9 V) measured with respect to an AgCl|Ag reference electrode are applied during PEC etching, resulting in different QDs. Atomic force microscope images show that while the QD density and sizes are similar for both applied potentials, the heights are more uniform and match the initial InGaN thickness at the lower applied potential. Schrodinger-Poisson simulations show that polarization-induced fields in the thin InGaN layer prevent positively charged carriers (holes) from arriving at the c-plane surface. These fields are mitigated in the less polar planes resulting in high etch selectivity for the different planes. The higher applied potential overcomes the polarization fields and breaks the anisotropic etching.
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This content will become publicly available on June 13, 2027
An Atomic Layer Etching (ALE)-Inspired Synthetic Protocol and Rapid Screening Process for ZnO Etching with β-Diketone Reagents
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Industrial scaleup of MXene synthesis has faced many challenges, both in the process safety and nanosheet yield. As a step toward the scalability of MXenes, we carried out a one-to-one comparison of the industrial scalability and application performance of two methods for producing Ti3C2Tz MXenes: LiF-HCl acid etching and Lewis acid molten salt etching. This study had an emphasis on nanoscale structure, electrical conductivity, electromagnetic interference (EMI) shielding and supercapacitive properties, yield, and process scalability, both at the etched clay stage and delaminated nanosheet stage. This comparison was completed in parallel with the same starting MAX phase, chemicals, and processing equipment, where necessary. The synthesis process influences the structure and terminal groups of MXenes, altering properties and performance. Notably, the electrical conductivity was superior for acid-etched nanosheets at 2200 S/cm, compared to salt-etched nanosheets at 0.66 S/cm. For EMI shielding effectiveness and capacitance, acid-etched nanosheets performed the highest. The yield of the acid-etched nanosheets was ~ 50% and salt-etched nanosheets was 15%. The acid-etched process was scaled up with a small business partner from 1-g to 200-g MAX phase, with similar properties and yield. When the salt-etching process was scaled up to 25 g of MAX, the properties remained similar to the 1 g batch, with a lower yield of ~ 5%. Although the acid-etching process was better for most metrics, the molten salt-etching method is still in its infancy and has advantages regarding process safety.more » « less
