Huang, Puyang, Di_Perna, Maximus Aldo, Hwang, William, Xue, Fen, Tsai, Wilman, Fan, Deliang, and Wang, Shan X. Next-generation MRAM technologies and their emerging roles in artificial intelligence. Retrieved from https://par.nsf.gov/biblio/10709071. Journal of Magnetism and Magnetic Materials 655.C Web. doi:10.1016/j.jmmm.2026.174308.

Huang, Puyang, Di_Perna, Maximus Aldo, Hwang, William, Xue, Fen, Tsai, Wilman, Fan, Deliang, & Wang, Shan X. Next-generation MRAM technologies and their emerging roles in artificial intelligence. Journal of Magnetism and Magnetic Materials, 655 (C). Retrieved from https://par.nsf.gov/biblio/10709071. https://doi.org/10.1016/j.jmmm.2026.174308

Huang, Puyang, Di_Perna, Maximus Aldo, Hwang, William, Xue, Fen, Tsai, Wilman, Fan, Deliang, and Wang, Shan X. "Next-generation MRAM technologies and their emerging roles in artificial intelligence". Journal of Magnetism and Magnetic Materials 655 (C). Country unknown/Code not available: Elsevier. https://doi.org/10.1016/j.jmmm.2026.174308. https://par.nsf.gov/biblio/10709071.

@article{osti_10709071,
place = {Country unknown/Code not available}, title = {Next-generation MRAM technologies and their emerging roles in artificial intelligence}, url = {https://par.nsf.gov/biblio/10709071}, DOI = {10.1016/j.jmmm.2026.174308}, abstractNote = {Not Available}, journal = {Journal of Magnetism and Magnetic Materials}, volume = {655}, number = {C}, publisher = {Elsevier}, author = {Huang, Puyang and Di_Perna, Maximus Aldo and Hwang, William and Xue, Fen and Tsai, Wilman and Fan, Deliang and Wang, Shan X}, }