%AGaldi, A.%AGaldi, A. [Dipartimento di Ingegneria dell'Informazione, Elettrica e Matematica Applicata, Università degli Studi di Salerno, I-84084 Fisciano, SA, Italy; CNR-SPIN Salerno, Università degli Studi di Salerno, I-84084 Fisciano, SA, Italy]%AOrgiani, P.%AOrgiani, P. [CNR-SPIN Salerno, Università degli Studi di Salerno, I-84084 Fisciano, SA, Italy]%ASacco, C.%ASacco, C. [CNR-SPIN Salerno, Università degli Studi di Salerno, I-84084 Fisciano, SA, Italy; Dipartimento di Ingegneria Industriale-DIIN, Università di Salerno, I-84084 Fisciano, SA, Italy]%AGobaut, B.%AGobaut, B. [Elettra Sincrotrone Trieste S.C.p.A., I-34149 Trieste, Italy]%ATorelli, P. [CNR Istituto Officina dei Materiali, TASC National Laboratory, I-34149 Trieste, Italy]%ATorelli, P.%AAruta, C.%AAruta, C. [CNR-SPIN, Università di Roma Tor Vergata, I-00133 Roma, Italy]%ABrookes, N. [European Synchrotron Radiation Facility, F-38043 Grenoble Cedex, France]%ABrookes, N.%AMinola, M.%AMinola, M. [CNR-SPIN and Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo Da Vinci 32, I-20133 Milano, Italy]%AHarter, J.%AHarter, J. [Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA]%AShen, K.%AShen, K. [Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA; Kavli Institute for Nanoscale Science, Ithaca, New York 14853, USA]%ASchlom, D. [Kavli Institute for Nanoscale Science, Ithaca, New York 14853, USA; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA]%ASchlom, D.%AMaritato, L. [CNR-SPIN Salerno, Università degli Studi di Salerno, I-84084 Fisciano, SA, Italy; Dipartimento di Ingegneria Industriale-DIIN, Università di Salerno, I-84084 Fisciano, SA, Italy]%AMaritato, L.%BJournal Name: Journal of Applied Physics; Journal Volume: 123; Journal Issue: 12; Related Information: CHORUS Timestamp: 2023-06-24 14:40:16 %D2018%IAmerican Institute of Physics %JJournal Name: Journal of Applied Physics; Journal Volume: 123; Journal Issue: 12; Related Information: CHORUS Timestamp: 2023-06-24 14:40:16 %K %MOSTI ID: 10055090 %PMedium: X %TX-ray absorption spectroscopy study of annealing process on Sr1– x La x CuO2 electron-doped cuprate thin films %X

The superconducting properties of Sr1–xLaxCuO2 thin films are strongly affected by sample preparation procedures, including the annealing step, which are not always well controlled. We have studied the evolution of Cu L2,3 and O K edge x-ray absorption spectra (XAS) of Sr1–xLaxCuO2 thin films as a function of reducing annealing, both qualitatively and quantitatively. By using linearly polarized radiation, we are able to identify the signatures of the presence of apical oxygen in the as-grown sample and its gradual removal as a function of duration of 350 °C Ar annealing performed on the same sample. Even though the as-grown sample appears to be hole doped, we cannot identify the signature of the Zhang-Rice singlet in the O K XAS, and it is extremely unlikely that the interstitial excess oxygen can give rise to a superconducting or even a metallic ground state. XAS and x-ray linear dichroism analyses are, therefore, shown to be valuable tools to improving the control over the annealing process of electron doped superconductors.

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