%ALyu, Sai%ALambrecht, Walter%BJournal Name: Journal of Physics D: Applied Physics %D2019%I %JJournal Name: Journal of Physics D: Applied Physics %K %MOSTI ID: 10120735 %PMedium: X %TBand alignment of III-N, ZnO and II-IV-N2 semiconductors from the electron affinity rule %XThe natural band alignment between various II-IV-N$_2$ and III-N and ZnO semiconductors are determined by means of first-principles surface calculations of their electron affinities. While these ignore specific interface dipole formation and strain effects, they provide a first guidance to the construction of heterojunction devices involving this family of materials. %0Journal Article