%ABarmak, Katayun%ABarmak, Katayun [Department of Applied Physics and Applied Mathematics, Columbia University, 500 West 120th Street, New York, New York 10027]%AEzzat, Sameer%AEzzat, Sameer [Department of Chemistry, University of Central Florida, 4111 Libra Drive, Orlando, Florida 32816, Department of Chemistry, University of Mosul, Mosul 41002, Iraq]%AGusley, Ryan%AGusley, Ryan [Department of Chemical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027]%AJog, Atharv%AJog, Atharv [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, New York 12180]%AKerdsongpanya, Sit [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, New York 12180]%AKerdsongpanya, Sit%AKhaniya, Asim [Department of Physics, University of Central Florida, 4111 Libra Drive, Orlando, Florida 32816]%AKhaniya, Asim%AMilosevic, Erik%AMilosevic, Erik [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, New York 12180]%ARichardson, William%ARichardson, William [Department of Physics, University of Central Florida, 4111 Libra Drive, Orlando, Florida 32816]%ASentosun, Kadir [Department of Applied Physics and Applied Mathematics, Columbia University, 500 West 120th Street, New York, New York 10027]%ASentosun, Kadir%AZangiabadi, Amirali%AZangiabadi, Amirali [Department of Applied Physics and Applied Mathematics, Columbia University, 500 West 120th Street, New York, New York 10027]%AGall, Daniel%AGall, Daniel [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, New York 12180]%AKaden, William%AKaden, William [Department of Physics, University of Central Florida, 4111 Libra Drive, Orlando, Florida 32816]%AMucciolo, Eduardo%AMucciolo, Eduardo [Department of Physics, University of Central Florida, 4111 Libra Drive, Orlando, Florida 32816]%ASchelling, Patrick [Department of Physics, University of Central Florida, 4111 Libra Drive, Orlando, Florida 32816, Advanced Materials Processing and Analysis Center, University of Central Florida, 4000 Central Florida Blvd. Box 162455, Orlando, Florida 32816]%ASchelling, Patrick%AWest, Alan%AWest, Alan [Department of Chemical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027]%ACoffey, Kevin%ACoffey, Kevin [Department of Materials Science and Engineering and Department of Physics, University of Central Florida, 12760 Pegasus Drive, Orlando, Florida 32816]%BJournal Name: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films; Journal Volume: 38; Journal Issue: 3; Related Information: CHORUS Timestamp: 2023-08-08 04:18:23 %D2020%IAmerican Vacuum Society %JJournal Name: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films; Journal Volume: 38; Journal Issue: 3; Related Information: CHORUS Timestamp: 2023-08-08 04:18:23 %K %MOSTI ID: 10145186 %PMedium: X %TEpitaxial metals for interconnects beyond Cu %X

Experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs–Sondheimer. The model fits show that the resistivity of Ru would cross below that for Co at a thickness of approximately 20 nm. For Ru films with thicknesses above 20 nm, transmission electron microscopy evidences threading and misfit dislocations, stacking faults, and deformation twins. Exposure of Co films to ambient air and the deposition of oxide layers of SiO2, MgO, Al2O3, and Cr2O3 on Ru degrade the surface specularity of the metallic layer. However, for the Ru films, annealing in a reducing ambient restores the surface specularity. Epitaxial electrochemical deposition of Co on epitaxially deposited Ru layers is used as an example to demonstrate the feasibility of generating epitaxial interconnects for back-end-of-line structures. An electron transport model based on a tight-binding approach is described, with Ru interconnects used as an example. The model allows conductivity to be computed for structures comprising large ensembles of atoms (105–106), scales linearly with system size, and can also incorporate defects.

%0Journal Article