%ALi, Wenshen%ANomoto, Kazuki%AHu, Zongyang%AJena, Debdeep%AXing, Huili%BJournal Name: IEEE Electron Device Letters; Journal Volume: 41; Journal Issue: 1 %D2020%I %JJournal Name: IEEE Electron Device Letters; Journal Volume: 41; Journal Issue: 1 %K %MOSTI ID: 10148252 %PMedium: X %TField-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2 /$R_{\text{on,sp}}$ of up to 0.95 GW/cm 2 %X %0Journal Article