%ALi, Wenshen%ANomoto, Kazuki%AHu, Zongyang%AJena, Debdeep%AXing, Huili%BJournal Name: IEEE Electron Device Letters; Journal Volume: 41; Journal Issue: 1
%D2020%I
%JJournal Name: IEEE Electron Device Letters; Journal Volume: 41; Journal Issue: 1
%K
%MOSTI ID: 10148252
%PMedium: X
%TField-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2 /$R_{\text{on,sp}}$ of up to 0.95 GW/cm 2
%X
%0Journal Article