%ALi, Lei%ANomoto, Kazuki%APan, Ming%ALi, Wenshen%AHickman, Austin%AMiller, Jeffrey%ALee, Kevin%AHu, Zongyang%ABader, Samuel%ALee, Soo%AHwang, James%AJena, Debdeep%AXing, Huili%BJournal Name: IEEE Electron Device Letters; Journal Volume: 41; Journal Issue: 5 %D2020%I %JJournal Name: IEEE Electron Device Letters; Journal Volume: 41; Journal Issue: 5 %K %MOSTI ID: 10148259 %PMedium: X %TGaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz %X %0Journal Article