%AKo, D.%ATsai, M.%AChen, J.%AShao, P.%ATan, Y.%AWang, J.%AHo, S.%ALai, Y.%AChueh, Y.%AChen, Y.%ATsai, D.%AChen, L.-Q.%AChu, Y.%BJournal Name: Science Advances; Journal Volume: 6; Journal Issue: 10 %D2020%I %JJournal Name: Science Advances; Journal Volume: 6; Journal Issue: 10 %K %MOSTI ID: 10155938 %PMedium: X %TMechanically controllable nonlinear dielectrics %XStrain-sensitive Ba x Sr 1− x TiO 3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba 0.5 Sr 0.5 TiO 3 (BSTO) and ferroelectric BaTiO 3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy. %0Journal Article